Correlation between Electron Mobility and Static
Dielectric Permittivity of n-InSb

Correlation between Electron Mobility and Static Dielectric Permittivity of n-InSb

Direct analytical calculations of the static dielectric permittivity-dependent electron mobility due to different elastic scattering mechanisms for n-type InSb were carried out. The calculated static dielectric permittivity increases by increasing of donor concentration. The temperature dependence o...

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Bibliographic Details
Main Author:	Alfaramawi K.
Format:	Article
Language:	English
Published:	De Gruyter 2015-11-01
Series:	Open Physics
Subjects:	static dielectric permittivity electron mobility scattering mechanisms
Online Access:	http://www.degruyter.com/view/j/phys.2015.13.issue-1/phys-2015-0039/phys-2015-0039.xml?format=INT

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