Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium
Abstract Growth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of In...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2021-03-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-021-03505-2 |
| _version_ | 1797727451018690560 |
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| author | Zhenzhen Tian Xiaoming Yuan Ziran Zhang Wuao Jia Jian Zhou Han Huang Jianqiao Meng Jun He Yong Du |
| author_facet | Zhenzhen Tian Xiaoming Yuan Ziran Zhang Wuao Jia Jian Zhou Han Huang Jianqiao Meng Jun He Yong Du |
| author_sort | Zhenzhen Tian |
| collection | DOAJ |
| description | Abstract Growth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth. |
| first_indexed | 2024-03-12T11:00:54Z |
| format | Article |
| id | doaj.art-cb971f6f43d74993a9aae2a21ab47c67 |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T11:00:54Z |
| publishDate | 2021-03-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-cb971f6f43d74993a9aae2a21ab47c672023-09-02T05:50:13ZengSpringerOpenNanoscale Research Letters1556-276X2021-03-011611910.1186/s11671-021-03505-2Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of GalliumZhenzhen Tian0Xiaoming Yuan1Ziran Zhang2Wuao Jia3Jian Zhou4Han Huang5Jianqiao Meng6Jun He7Yong Du8Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South UniversityHunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South UniversityHunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South UniversityHunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South UniversityCollege of Mechanical and Vehicle Engineering, Hunan UniversityHunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South UniversityHunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South UniversityHunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South UniversityState Key Laboratory of Powder Metallurgy, Central South UniversityAbstract Growth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.https://doi.org/10.1186/s11671-021-03505-2Nanowire growthGaPInPChemical vapor depositionCALPHAD |
| spellingShingle | Zhenzhen Tian Xiaoming Yuan Ziran Zhang Wuao Jia Jian Zhou Han Huang Jianqiao Meng Jun He Yong Du Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium Nanoscale Research Letters Nanowire growth GaP InP Chemical vapor deposition CALPHAD |
| title | Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium |
| title_full | Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium |
| title_fullStr | Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium |
| title_full_unstemmed | Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium |
| title_short | Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium |
| title_sort | thermodynamics controlled sharp transformation from inp to gap nanowires via introducing trace amount of gallium |
| topic | Nanowire growth GaP InP Chemical vapor deposition CALPHAD |
| url | https://doi.org/10.1186/s11671-021-03505-2 |
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