Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium
Abstract Growth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of In...
Main Authors: | Zhenzhen Tian, Xiaoming Yuan, Ziran Zhang, Wuao Jia, Jian Zhou, Han Huang, Jianqiao Meng, Jun He, Yong Du |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2021-03-01
|
Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | https://doi.org/10.1186/s11671-021-03505-2 |
Similar Items
-
Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires
by: Xianghai Ji, et al.
Published: (2018-09-01) -
Raman Spectroscopic Characterizations of Self-Catalyzed InP/InAs/InP One-Dimensional Nanostructures on InP(111)B Substrate using a Simple Substrate-Tilting Method
by: Jeung Hun Park, et al.
Published: (2019-11-01) -
Electronic transport mechanism and defect states for p-InP/i-InGaAs/n-InP photodiodes
by: Thi Kim Oanh Vu, et al.
Published: (2022-07-01) -
Photoluminescence of ingaas/inp grown by molecular beam epitaxy
by: Harmand Jean Christophe, et al.
Published: (2004-01-01) -
Fotoluminescência do ingaas/inp crescido pela técnica de epitaxia por feixe molecular
by: Luiz Carlos Poças, et al.
Published: (2004-12-01)