Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation
Copper nitride particles have a low decomposition temperature, they absorb light, and are oxidation-resistant, making them potentially useful for the development of novel wiring inks for printing circuit boards by means of intense pulsed light (IPL) sintering at low-energy. Here, we compared the the...
Main Authors: | , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-08-01
|
Series: | Nanomaterials |
Subjects: | |
Online Access: | http://www.mdpi.com/2079-4991/8/8/617 |
_version_ | 1818914333421207552 |
---|---|
author | Takashi Nakamura Hea Jeong Cheong Masahiko Takamura Manabu Yoshida Sei Uemura |
author_facet | Takashi Nakamura Hea Jeong Cheong Masahiko Takamura Manabu Yoshida Sei Uemura |
author_sort | Takashi Nakamura |
collection | DOAJ |
description | Copper nitride particles have a low decomposition temperature, they absorb light, and are oxidation-resistant, making them potentially useful for the development of novel wiring inks for printing circuit boards by means of intense pulsed light (IPL) sintering at low-energy. Here, we compared the thermal decomposition and light absorption of copper materials, including copper nitride (Cu3N), copper(I) oxide (Cu2O), or copper(II) oxide (CuO). Among the copper compounds examined, copper nitride had the second highest light absorbency and lowest decomposition temperature; therefore, we concluded that copper nitride was the most suitable material for producing a wiring ink that is sintered by means of IPL irradiation. Wiring inks containing copper nitride were compared with those of wiring inks containing copper nitride, copper(I) oxide, or copper(II) oxide, and copper conversion rate and sheet resistance were also determined. Under low-energy irradiation (8.3 J cm−2), copper nitride was converted to copper at the highest rate among the copper materials, and provided a sheet resistance of 0.506 Ω sq−1, indicating that copper nitride is indeed a candidate material for development as a wiring ink for low-energy intense pulsed light sintering-based printed circuit board production processes. |
first_indexed | 2024-12-19T23:44:43Z |
format | Article |
id | doaj.art-cbb3981cb87d446b94ed364cb4f3500c |
institution | Directory Open Access Journal |
issn | 2079-4991 |
language | English |
last_indexed | 2024-12-19T23:44:43Z |
publishDate | 2018-08-01 |
publisher | MDPI AG |
record_format | Article |
series | Nanomaterials |
spelling | doaj.art-cbb3981cb87d446b94ed364cb4f3500c2022-12-21T20:01:20ZengMDPI AGNanomaterials2079-49912018-08-018861710.3390/nano8080617nano8080617Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light IrradiationTakashi Nakamura0Hea Jeong Cheong1Masahiko Takamura2Manabu Yoshida3Sei Uemura4Research Institute for Chemical Process Technology, National Institute of Advanced Industrial Science and Technology (AIST), 4-2-1 Nigatake Miyagino-ku, Sendai, Miyagi 983-8551, JapanFlexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, JapanNicca Chemical Co. Ltd., 23-1, 4-chome, Bunkyo, Fukui-city, Fukui 910-8670, JapanFlexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, JapanFlexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, JapanCopper nitride particles have a low decomposition temperature, they absorb light, and are oxidation-resistant, making them potentially useful for the development of novel wiring inks for printing circuit boards by means of intense pulsed light (IPL) sintering at low-energy. Here, we compared the thermal decomposition and light absorption of copper materials, including copper nitride (Cu3N), copper(I) oxide (Cu2O), or copper(II) oxide (CuO). Among the copper compounds examined, copper nitride had the second highest light absorbency and lowest decomposition temperature; therefore, we concluded that copper nitride was the most suitable material for producing a wiring ink that is sintered by means of IPL irradiation. Wiring inks containing copper nitride were compared with those of wiring inks containing copper nitride, copper(I) oxide, or copper(II) oxide, and copper conversion rate and sheet resistance were also determined. Under low-energy irradiation (8.3 J cm−2), copper nitride was converted to copper at the highest rate among the copper materials, and provided a sheet resistance of 0.506 Ω sq−1, indicating that copper nitride is indeed a candidate material for development as a wiring ink for low-energy intense pulsed light sintering-based printed circuit board production processes.http://www.mdpi.com/2079-4991/8/8/617coppercopper nitridephoto sinteringinkpasteprinted electronicspost-processing |
spellingShingle | Takashi Nakamura Hea Jeong Cheong Masahiko Takamura Manabu Yoshida Sei Uemura Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation Nanomaterials copper copper nitride photo sintering ink paste printed electronics post-processing |
title | Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation |
title_full | Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation |
title_fullStr | Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation |
title_full_unstemmed | Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation |
title_short | Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation |
title_sort | suitability of copper nitride as a wiring ink sintered by low energy intense pulsed light irradiation |
topic | copper copper nitride photo sintering ink paste printed electronics post-processing |
url | http://www.mdpi.com/2079-4991/8/8/617 |
work_keys_str_mv | AT takashinakamura suitabilityofcoppernitrideasawiringinksinteredbylowenergyintensepulsedlightirradiation AT heajeongcheong suitabilityofcoppernitrideasawiringinksinteredbylowenergyintensepulsedlightirradiation AT masahikotakamura suitabilityofcoppernitrideasawiringinksinteredbylowenergyintensepulsedlightirradiation AT manabuyoshida suitabilityofcoppernitrideasawiringinksinteredbylowenergyintensepulsedlightirradiation AT seiuemura suitabilityofcoppernitrideasawiringinksinteredbylowenergyintensepulsedlightirradiation |