Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation

Copper nitride particles have a low decomposition temperature, they absorb light, and are oxidation-resistant, making them potentially useful for the development of novel wiring inks for printing circuit boards by means of intense pulsed light (IPL) sintering at low-energy. Here, we compared the the...

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Main Authors: Takashi Nakamura, Hea Jeong Cheong, Masahiko Takamura, Manabu Yoshida, Sei Uemura
Format: Article
Language:English
Published: MDPI AG 2018-08-01
Series:Nanomaterials
Subjects:
Online Access:http://www.mdpi.com/2079-4991/8/8/617
_version_ 1818914333421207552
author Takashi Nakamura
Hea Jeong Cheong
Masahiko Takamura
Manabu Yoshida
Sei Uemura
author_facet Takashi Nakamura
Hea Jeong Cheong
Masahiko Takamura
Manabu Yoshida
Sei Uemura
author_sort Takashi Nakamura
collection DOAJ
description Copper nitride particles have a low decomposition temperature, they absorb light, and are oxidation-resistant, making them potentially useful for the development of novel wiring inks for printing circuit boards by means of intense pulsed light (IPL) sintering at low-energy. Here, we compared the thermal decomposition and light absorption of copper materials, including copper nitride (Cu3N), copper(I) oxide (Cu2O), or copper(II) oxide (CuO). Among the copper compounds examined, copper nitride had the second highest light absorbency and lowest decomposition temperature; therefore, we concluded that copper nitride was the most suitable material for producing a wiring ink that is sintered by means of IPL irradiation. Wiring inks containing copper nitride were compared with those of wiring inks containing copper nitride, copper(I) oxide, or copper(II) oxide, and copper conversion rate and sheet resistance were also determined. Under low-energy irradiation (8.3 J cm−2), copper nitride was converted to copper at the highest rate among the copper materials, and provided a sheet resistance of 0.506 Ω sq−1, indicating that copper nitride is indeed a candidate material for development as a wiring ink for low-energy intense pulsed light sintering-based printed circuit board production processes.
first_indexed 2024-12-19T23:44:43Z
format Article
id doaj.art-cbb3981cb87d446b94ed364cb4f3500c
institution Directory Open Access Journal
issn 2079-4991
language English
last_indexed 2024-12-19T23:44:43Z
publishDate 2018-08-01
publisher MDPI AG
record_format Article
series Nanomaterials
spelling doaj.art-cbb3981cb87d446b94ed364cb4f3500c2022-12-21T20:01:20ZengMDPI AGNanomaterials2079-49912018-08-018861710.3390/nano8080617nano8080617Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light IrradiationTakashi Nakamura0Hea Jeong Cheong1Masahiko Takamura2Manabu Yoshida3Sei Uemura4Research Institute for Chemical Process Technology, National Institute of Advanced Industrial Science and Technology (AIST), 4-2-1 Nigatake Miyagino-ku, Sendai, Miyagi 983-8551, JapanFlexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, JapanNicca Chemical Co. Ltd., 23-1, 4-chome, Bunkyo, Fukui-city, Fukui 910-8670, JapanFlexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, JapanFlexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, JapanCopper nitride particles have a low decomposition temperature, they absorb light, and are oxidation-resistant, making them potentially useful for the development of novel wiring inks for printing circuit boards by means of intense pulsed light (IPL) sintering at low-energy. Here, we compared the thermal decomposition and light absorption of copper materials, including copper nitride (Cu3N), copper(I) oxide (Cu2O), or copper(II) oxide (CuO). Among the copper compounds examined, copper nitride had the second highest light absorbency and lowest decomposition temperature; therefore, we concluded that copper nitride was the most suitable material for producing a wiring ink that is sintered by means of IPL irradiation. Wiring inks containing copper nitride were compared with those of wiring inks containing copper nitride, copper(I) oxide, or copper(II) oxide, and copper conversion rate and sheet resistance were also determined. Under low-energy irradiation (8.3 J cm−2), copper nitride was converted to copper at the highest rate among the copper materials, and provided a sheet resistance of 0.506 Ω sq−1, indicating that copper nitride is indeed a candidate material for development as a wiring ink for low-energy intense pulsed light sintering-based printed circuit board production processes.http://www.mdpi.com/2079-4991/8/8/617coppercopper nitridephoto sinteringinkpasteprinted electronicspost-processing
spellingShingle Takashi Nakamura
Hea Jeong Cheong
Masahiko Takamura
Manabu Yoshida
Sei Uemura
Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation
Nanomaterials
copper
copper nitride
photo sintering
ink
paste
printed electronics
post-processing
title Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation
title_full Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation
title_fullStr Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation
title_full_unstemmed Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation
title_short Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation
title_sort suitability of copper nitride as a wiring ink sintered by low energy intense pulsed light irradiation
topic copper
copper nitride
photo sintering
ink
paste
printed electronics
post-processing
url http://www.mdpi.com/2079-4991/8/8/617
work_keys_str_mv AT takashinakamura suitabilityofcoppernitrideasawiringinksinteredbylowenergyintensepulsedlightirradiation
AT heajeongcheong suitabilityofcoppernitrideasawiringinksinteredbylowenergyintensepulsedlightirradiation
AT masahikotakamura suitabilityofcoppernitrideasawiringinksinteredbylowenergyintensepulsedlightirradiation
AT manabuyoshida suitabilityofcoppernitrideasawiringinksinteredbylowenergyintensepulsedlightirradiation
AT seiuemura suitabilityofcoppernitrideasawiringinksinteredbylowenergyintensepulsedlightirradiation