Fabrication and Polishing Performance of Diamond Self-Sharpening Gel Polishing Disk
A diamond gel polishing disk with self-sharpening ability is proposed to solve the problem of glazing phenomenon in the gel polishing disks. Aluminum nitride (AlN) powder with silica sol film coating (A/S powder) is added to the polishing disk, and a specific solution is used to dissolve the A/S pow...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-12-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/1/56 |
| _version_ | 1827371461976784896 |
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| author | Lanxing Xu Kaiping Feng Liang Zhao Binghai Lyu |
| author_facet | Lanxing Xu Kaiping Feng Liang Zhao Binghai Lyu |
| author_sort | Lanxing Xu |
| collection | DOAJ |
| description | A diamond gel polishing disk with self-sharpening ability is proposed to solve the problem of glazing phenomenon in the gel polishing disks. Aluminum nitride (AlN) powder with silica sol film coating (A/S powder) is added to the polishing disk, and a specific solution is used to dissolve the A/S powder during polishing, forming a pore structure on the polishing disk. To realize the self-sharpening process, the dissolution property of the A/S powder is analyzed. The effect of A/S powder content on the friction and wear performance and the polishing performance of 4H-SiC wafers are investigated. Results showed that the friction coefficient of the polishing disk with 9 wt% A/S powder content is the most stable. The surface roughness <i>R<sub>a</sub></i> of 2.25 nm can be achieved, and there is no obvious glazing phenomenon on the polishing disk after polishing. The surface roughness of the 4H-SiC wafer is reduced by 38.8% compared with that of the polishing disk with no A/S powder addition after rough polishing, and the 4H-SiC wafer then obtained a damage-free surface with a <i>R<sub>a</sub></i> less than 0.4 nm after fine polishing by chemical mechanical polishing (CMP). |
| first_indexed | 2024-03-08T10:40:44Z |
| format | Article |
| id | doaj.art-cbed0aa1b7cf47c894ab576b4051fff9 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-08T10:40:44Z |
| publishDate | 2023-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-cbed0aa1b7cf47c894ab576b4051fff92024-01-26T17:43:35ZengMDPI AGMicromachines2072-666X2023-12-011515610.3390/mi15010056Fabrication and Polishing Performance of Diamond Self-Sharpening Gel Polishing DiskLanxing Xu0Kaiping Feng1Liang Zhao2Binghai Lyu3College of Mechanical Engineering, Quzhou University, No. 78, North Jiuhua Road, Quzhou 324000, ChinaCollege of Mechanical Engineering, Quzhou University, No. 78, North Jiuhua Road, Quzhou 324000, ChinaCollege of Mechanical Engineering, Quzhou University, No. 78, North Jiuhua Road, Quzhou 324000, ChinaChina Ultra-Precision Machining Centre, Zhejiang University of Technology, No. 18, Chaowang Road, Hangzhou 310014, ChinaA diamond gel polishing disk with self-sharpening ability is proposed to solve the problem of glazing phenomenon in the gel polishing disks. Aluminum nitride (AlN) powder with silica sol film coating (A/S powder) is added to the polishing disk, and a specific solution is used to dissolve the A/S powder during polishing, forming a pore structure on the polishing disk. To realize the self-sharpening process, the dissolution property of the A/S powder is analyzed. The effect of A/S powder content on the friction and wear performance and the polishing performance of 4H-SiC wafers are investigated. Results showed that the friction coefficient of the polishing disk with 9 wt% A/S powder content is the most stable. The surface roughness <i>R<sub>a</sub></i> of 2.25 nm can be achieved, and there is no obvious glazing phenomenon on the polishing disk after polishing. The surface roughness of the 4H-SiC wafer is reduced by 38.8% compared with that of the polishing disk with no A/S powder addition after rough polishing, and the 4H-SiC wafer then obtained a damage-free surface with a <i>R<sub>a</sub></i> less than 0.4 nm after fine polishing by chemical mechanical polishing (CMP).https://www.mdpi.com/2072-666X/15/1/56gel polishing diskself-sharpeningultrafine diamond4H-SiC waferAlN powder |
| spellingShingle | Lanxing Xu Kaiping Feng Liang Zhao Binghai Lyu Fabrication and Polishing Performance of Diamond Self-Sharpening Gel Polishing Disk Micromachines gel polishing disk self-sharpening ultrafine diamond 4H-SiC wafer AlN powder |
| title | Fabrication and Polishing Performance of Diamond Self-Sharpening Gel Polishing Disk |
| title_full | Fabrication and Polishing Performance of Diamond Self-Sharpening Gel Polishing Disk |
| title_fullStr | Fabrication and Polishing Performance of Diamond Self-Sharpening Gel Polishing Disk |
| title_full_unstemmed | Fabrication and Polishing Performance of Diamond Self-Sharpening Gel Polishing Disk |
| title_short | Fabrication and Polishing Performance of Diamond Self-Sharpening Gel Polishing Disk |
| title_sort | fabrication and polishing performance of diamond self sharpening gel polishing disk |
| topic | gel polishing disk self-sharpening ultrafine diamond 4H-SiC wafer AlN powder |
| url | https://www.mdpi.com/2072-666X/15/1/56 |
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