Electroplating Deposition of Bismuth Absorbers for X-ray Superconducting Transition Edge Sensors
An absorber with a high absorbing efficiency is crucial for X-ray transition edge sensors (TESs) to realize high quantum efficiency and the best energy resolution. Semimetal Bismuth (Bi) has shown greater superiority than gold (Au) as the absorber due to the low specific heat capacity, which is two...
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2021-11-01
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| Online Access: | https://www.mdpi.com/1996-1944/14/23/7169 |
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| author | Jian Chen Jinjin Li Xiaolong Xu Zhenyu Wang Siming Guo Zheng Jiang Huifang Gao Qing Zhong Yuan Zhong Jiusun Zeng Xueshen Wang |
| author_facet | Jian Chen Jinjin Li Xiaolong Xu Zhenyu Wang Siming Guo Zheng Jiang Huifang Gao Qing Zhong Yuan Zhong Jiusun Zeng Xueshen Wang |
| author_sort | Jian Chen |
| collection | DOAJ |
| description | An absorber with a high absorbing efficiency is crucial for X-ray transition edge sensors (TESs) to realize high quantum efficiency and the best energy resolution. Semimetal Bismuth (Bi) has shown greater superiority than gold (Au) as the absorber due to the low specific heat capacity, which is two orders of magnitude smaller. The electroplating process of Bi films is investigated. The Bi grains show a polycrystalline rhombohedral structure, and the X-ray diffraction (XRD) patterns show a typical crystal orientation of (012). The average grain size becomes larger as the electroplating current density and the thickness increase, and the orientation of Bi grains changes as the temperature increases. The residual resistance ratio (RRR) (<i>R</i><sub>300 K</sub>/<i>R</i><sub>4.2 K</sub>) is 1.37 for the Bi film (862 nm) deposited with 9 mA/cm<sup>2</sup> at 40 °C for 2 min. The absorptivity of the 5 μm thick Bi films is 40.3% and 30.7% for 10 keV and 15.6 keV X-ray radiation respectively, which shows that Bi films are a good candidate as the absorber of X-ray TESs. |
| first_indexed | 2024-03-10T04:50:42Z |
| format | Article |
| id | doaj.art-cc0680707b3b4bb9931a50d44800e005 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T04:50:42Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-cc0680707b3b4bb9931a50d44800e0052023-11-23T02:39:19ZengMDPI AGMaterials1996-19442021-11-011423716910.3390/ma14237169Electroplating Deposition of Bismuth Absorbers for X-ray Superconducting Transition Edge SensorsJian Chen0Jinjin Li1Xiaolong Xu2Zhenyu Wang3Siming Guo4Zheng Jiang5Huifang Gao6Qing Zhong7Yuan Zhong8Jiusun Zeng9Xueshen Wang10National Institute of Metrology (NIM), Beijing 100029, ChinaNational Institute of Metrology (NIM), Beijing 100029, ChinaNational Institute of Metrology (NIM), Beijing 100029, ChinaCollege of Metrology and Measurement Engineering, China Jiliang University, Hangzhou 310018, ChinaNational Institute of Metrology (NIM), Beijing 100029, ChinaNational Institute of Metrology (NIM), Beijing 100029, ChinaNational Institute of Metrology (NIM), Beijing 100029, ChinaNational Institute of Metrology (NIM), Beijing 100029, ChinaNational Institute of Metrology (NIM), Beijing 100029, ChinaCollege of Metrology and Measurement Engineering, China Jiliang University, Hangzhou 310018, ChinaNational Institute of Metrology (NIM), Beijing 100029, ChinaAn absorber with a high absorbing efficiency is crucial for X-ray transition edge sensors (TESs) to realize high quantum efficiency and the best energy resolution. Semimetal Bismuth (Bi) has shown greater superiority than gold (Au) as the absorber due to the low specific heat capacity, which is two orders of magnitude smaller. The electroplating process of Bi films is investigated. The Bi grains show a polycrystalline rhombohedral structure, and the X-ray diffraction (XRD) patterns show a typical crystal orientation of (012). The average grain size becomes larger as the electroplating current density and the thickness increase, and the orientation of Bi grains changes as the temperature increases. The residual resistance ratio (RRR) (<i>R</i><sub>300 K</sub>/<i>R</i><sub>4.2 K</sub>) is 1.37 for the Bi film (862 nm) deposited with 9 mA/cm<sup>2</sup> at 40 °C for 2 min. The absorptivity of the 5 μm thick Bi films is 40.3% and 30.7% for 10 keV and 15.6 keV X-ray radiation respectively, which shows that Bi films are a good candidate as the absorber of X-ray TESs.https://www.mdpi.com/1996-1944/14/23/7169transition edge sensorsbismuthabsorberselectroplating deposition |
| spellingShingle | Jian Chen Jinjin Li Xiaolong Xu Zhenyu Wang Siming Guo Zheng Jiang Huifang Gao Qing Zhong Yuan Zhong Jiusun Zeng Xueshen Wang Electroplating Deposition of Bismuth Absorbers for X-ray Superconducting Transition Edge Sensors Materials transition edge sensors bismuth absorbers electroplating deposition |
| title | Electroplating Deposition of Bismuth Absorbers for X-ray Superconducting Transition Edge Sensors |
| title_full | Electroplating Deposition of Bismuth Absorbers for X-ray Superconducting Transition Edge Sensors |
| title_fullStr | Electroplating Deposition of Bismuth Absorbers for X-ray Superconducting Transition Edge Sensors |
| title_full_unstemmed | Electroplating Deposition of Bismuth Absorbers for X-ray Superconducting Transition Edge Sensors |
| title_short | Electroplating Deposition of Bismuth Absorbers for X-ray Superconducting Transition Edge Sensors |
| title_sort | electroplating deposition of bismuth absorbers for x ray superconducting transition edge sensors |
| topic | transition edge sensors bismuth absorbers electroplating deposition |
| url | https://www.mdpi.com/1996-1944/14/23/7169 |
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