On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction
Power amplifier (PA) specifications are closely related to changes in temperature; thus, the small-signal gain (S21) of PA decreases with the temperature increase. To compensate for the degradation caused by the decrease in S21, we present a compensation circuit that consists of two diodes and four...
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Format: | Article |
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MDPI AG
2022-07-01
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Series: | Micromachines |
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Online Access: | https://www.mdpi.com/2072-666X/13/7/1101 |
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author | Shaohua Zhou Shizhe Wei Jian Wang |
author_facet | Shaohua Zhou Shizhe Wei Jian Wang |
author_sort | Shaohua Zhou |
collection | DOAJ |
description | Power amplifier (PA) specifications are closely related to changes in temperature; thus, the small-signal gain (S21) of PA decreases with the temperature increase. To compensate for the degradation caused by the decrease in S21, we present a compensation circuit that consists of two diodes and four resistors. At the same time, a differential stacked millimeter-wave wideband PA was designed and implemented based on this compensation circuit and 55 nm CMOS process. The post-layout simulation results showed that the fluctuation of S21 reduced from 2.4 dB to 0.1 dB in the frequency range of 25−40 GHz over the temperature range of −40 °C to 125 °C. Furthermore, the proposed on-chip temperature compensation circuit also applies to multi-stage cascaded microwave/mm-wave power amplifiers. |
first_indexed | 2024-03-09T06:11:57Z |
format | Article |
id | doaj.art-cc37a66ec0644280872ee5f95a384b85 |
institution | Directory Open Access Journal |
issn | 2072-666X |
language | English |
last_indexed | 2024-03-09T06:11:57Z |
publishDate | 2022-07-01 |
publisher | MDPI AG |
record_format | Article |
series | Micromachines |
spelling | doaj.art-cc37a66ec0644280872ee5f95a384b852023-12-03T11:58:02ZengMDPI AGMicromachines2072-666X2022-07-01137110110.3390/mi13071101On-Chip Temperature Compensation for Small-Signal Gain Variation ReductionShaohua Zhou0Shizhe Wei1Jian Wang2School of Microelectronics, Tianjin University, Tianjin 300072, ChinaSchool of Microelectronics, Tianjin University, Tianjin 300072, ChinaSchool of Microelectronics, Tianjin University, Tianjin 300072, ChinaPower amplifier (PA) specifications are closely related to changes in temperature; thus, the small-signal gain (S21) of PA decreases with the temperature increase. To compensate for the degradation caused by the decrease in S21, we present a compensation circuit that consists of two diodes and four resistors. At the same time, a differential stacked millimeter-wave wideband PA was designed and implemented based on this compensation circuit and 55 nm CMOS process. The post-layout simulation results showed that the fluctuation of S21 reduced from 2.4 dB to 0.1 dB in the frequency range of 25−40 GHz over the temperature range of −40 °C to 125 °C. Furthermore, the proposed on-chip temperature compensation circuit also applies to multi-stage cascaded microwave/mm-wave power amplifiers.https://www.mdpi.com/2072-666X/13/7/1101millimeter-waveCMOSpower amplifierspecification degradationtemperature compensation |
spellingShingle | Shaohua Zhou Shizhe Wei Jian Wang On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction Micromachines millimeter-wave CMOS power amplifier specification degradation temperature compensation |
title | On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction |
title_full | On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction |
title_fullStr | On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction |
title_full_unstemmed | On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction |
title_short | On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction |
title_sort | on chip temperature compensation for small signal gain variation reduction |
topic | millimeter-wave CMOS power amplifier specification degradation temperature compensation |
url | https://www.mdpi.com/2072-666X/13/7/1101 |
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