On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction

Power amplifier (PA) specifications are closely related to changes in temperature; thus, the small-signal gain (S21) of PA decreases with the temperature increase. To compensate for the degradation caused by the decrease in S21, we present a compensation circuit that consists of two diodes and four...

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Main Authors: Shaohua Zhou, Shizhe Wei, Jian Wang
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/13/7/1101
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author Shaohua Zhou
Shizhe Wei
Jian Wang
author_facet Shaohua Zhou
Shizhe Wei
Jian Wang
author_sort Shaohua Zhou
collection DOAJ
description Power amplifier (PA) specifications are closely related to changes in temperature; thus, the small-signal gain (S21) of PA decreases with the temperature increase. To compensate for the degradation caused by the decrease in S21, we present a compensation circuit that consists of two diodes and four resistors. At the same time, a differential stacked millimeter-wave wideband PA was designed and implemented based on this compensation circuit and 55 nm CMOS process. The post-layout simulation results showed that the fluctuation of S21 reduced from 2.4 dB to 0.1 dB in the frequency range of 25−40 GHz over the temperature range of −40 °C to 125 °C. Furthermore, the proposed on-chip temperature compensation circuit also applies to multi-stage cascaded microwave/mm-wave power amplifiers.
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spelling doaj.art-cc37a66ec0644280872ee5f95a384b852023-12-03T11:58:02ZengMDPI AGMicromachines2072-666X2022-07-01137110110.3390/mi13071101On-Chip Temperature Compensation for Small-Signal Gain Variation ReductionShaohua Zhou0Shizhe Wei1Jian Wang2School of Microelectronics, Tianjin University, Tianjin 300072, ChinaSchool of Microelectronics, Tianjin University, Tianjin 300072, ChinaSchool of Microelectronics, Tianjin University, Tianjin 300072, ChinaPower amplifier (PA) specifications are closely related to changes in temperature; thus, the small-signal gain (S21) of PA decreases with the temperature increase. To compensate for the degradation caused by the decrease in S21, we present a compensation circuit that consists of two diodes and four resistors. At the same time, a differential stacked millimeter-wave wideband PA was designed and implemented based on this compensation circuit and 55 nm CMOS process. The post-layout simulation results showed that the fluctuation of S21 reduced from 2.4 dB to 0.1 dB in the frequency range of 25−40 GHz over the temperature range of −40 °C to 125 °C. Furthermore, the proposed on-chip temperature compensation circuit also applies to multi-stage cascaded microwave/mm-wave power amplifiers.https://www.mdpi.com/2072-666X/13/7/1101millimeter-waveCMOSpower amplifierspecification degradationtemperature compensation
spellingShingle Shaohua Zhou
Shizhe Wei
Jian Wang
On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction
Micromachines
millimeter-wave
CMOS
power amplifier
specification degradation
temperature compensation
title On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction
title_full On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction
title_fullStr On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction
title_full_unstemmed On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction
title_short On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction
title_sort on chip temperature compensation for small signal gain variation reduction
topic millimeter-wave
CMOS
power amplifier
specification degradation
temperature compensation
url https://www.mdpi.com/2072-666X/13/7/1101
work_keys_str_mv AT shaohuazhou onchiptemperaturecompensationforsmallsignalgainvariationreduction
AT shizhewei onchiptemperaturecompensationforsmallsignalgainvariationreduction
AT jianwang onchiptemperaturecompensationforsmallsignalgainvariationreduction