Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors
In this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET). The simulating results illustrate that the elect...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
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IOP Publishing
2021-01-01
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Series: | Materials Research Express |
Subjects: | |
Online Access: | https://doi.org/10.1088/2053-1591/ac2016 |
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author | Y G Xiao K C Kang L Y Tian K Xiong G Li M H Tang Z Li |
author_facet | Y G Xiao K C Kang L Y Tian K Xiong G Li M H Tang Z Li |
author_sort | Y G Xiao |
collection | DOAJ |
description | In this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET). The simulating results illustrate that the electrical conductivity ( σ ) of the interface layer between the electrode and ferroelectric thin film caused by lattice misfit plays an important role in the process of voltage amplifying and steep switching for the NC-FET. It is indicated that new device design rules should take into account this scenario. |
first_indexed | 2024-03-12T15:43:31Z |
format | Article |
id | doaj.art-cc524320af3843b29e55a81954f3089c |
institution | Directory Open Access Journal |
issn | 2053-1591 |
language | English |
last_indexed | 2024-03-12T15:43:31Z |
publishDate | 2021-01-01 |
publisher | IOP Publishing |
record_format | Article |
series | Materials Research Express |
spelling | doaj.art-cc524320af3843b29e55a81954f3089c2023-08-09T15:54:08ZengIOP PublishingMaterials Research Express2053-15912021-01-018909590210.1088/2053-1591/ac2016Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistorsY G Xiao0https://orcid.org/0000-0003-1298-6906K C Kang1L Y Tian2K Xiong3G Li4M H Tang5Z Li6Key Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaKey Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaKey Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaKey Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaKey Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaKey Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaKey Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaIn this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET). The simulating results illustrate that the electrical conductivity ( σ ) of the interface layer between the electrode and ferroelectric thin film caused by lattice misfit plays an important role in the process of voltage amplifying and steep switching for the NC-FET. It is indicated that new device design rules should take into account this scenario.https://doi.org/10.1088/2053-1591/ac2016negative capacitanceinterfacial conductivityfield effect transistorsubthreshold swing |
spellingShingle | Y G Xiao K C Kang L Y Tian K Xiong G Li M H Tang Z Li Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors Materials Research Express negative capacitance interfacial conductivity field effect transistor subthreshold swing |
title | Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors |
title_full | Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors |
title_fullStr | Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors |
title_full_unstemmed | Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors |
title_short | Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors |
title_sort | effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors |
topic | negative capacitance interfacial conductivity field effect transistor subthreshold swing |
url | https://doi.org/10.1088/2053-1591/ac2016 |
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