Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors

In this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET). The simulating results illustrate that the elect...

Full description

Bibliographic Details
Main Authors: Y G Xiao, K C Kang, L Y Tian, K Xiong, G Li, M H Tang, Z Li
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:Materials Research Express
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/ac2016
_version_ 1797746838344826880
author Y G Xiao
K C Kang
L Y Tian
K Xiong
G Li
M H Tang
Z Li
author_facet Y G Xiao
K C Kang
L Y Tian
K Xiong
G Li
M H Tang
Z Li
author_sort Y G Xiao
collection DOAJ
description In this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET). The simulating results illustrate that the electrical conductivity ( σ ) of the interface layer between the electrode and ferroelectric thin film caused by lattice misfit plays an important role in the process of voltage amplifying and steep switching for the NC-FET. It is indicated that new device design rules should take into account this scenario.
first_indexed 2024-03-12T15:43:31Z
format Article
id doaj.art-cc524320af3843b29e55a81954f3089c
institution Directory Open Access Journal
issn 2053-1591
language English
last_indexed 2024-03-12T15:43:31Z
publishDate 2021-01-01
publisher IOP Publishing
record_format Article
series Materials Research Express
spelling doaj.art-cc524320af3843b29e55a81954f3089c2023-08-09T15:54:08ZengIOP PublishingMaterials Research Express2053-15912021-01-018909590210.1088/2053-1591/ac2016Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistorsY G Xiao0https://orcid.org/0000-0003-1298-6906K C Kang1L Y Tian2K Xiong3G Li4M H Tang5Z Li6Key Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaKey Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaKey Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaKey Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaKey Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaKey Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaKey Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University , Xiangtan, Hunan, 411105, People’s Republic of China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , People’s Republic of ChinaIn this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET). The simulating results illustrate that the electrical conductivity ( σ ) of the interface layer between the electrode and ferroelectric thin film caused by lattice misfit plays an important role in the process of voltage amplifying and steep switching for the NC-FET. It is indicated that new device design rules should take into account this scenario.https://doi.org/10.1088/2053-1591/ac2016negative capacitanceinterfacial conductivityfield effect transistorsubthreshold swing
spellingShingle Y G Xiao
K C Kang
L Y Tian
K Xiong
G Li
M H Tang
Z Li
Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors
Materials Research Express
negative capacitance
interfacial conductivity
field effect transistor
subthreshold swing
title Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors
title_full Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors
title_fullStr Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors
title_full_unstemmed Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors
title_short Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors
title_sort effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors
topic negative capacitance
interfacial conductivity
field effect transistor
subthreshold swing
url https://doi.org/10.1088/2053-1591/ac2016
work_keys_str_mv AT ygxiao effectofinterfacialconductivityonelectricalcharacteristicsofnegativecapacitancefieldeffecttransistors
AT kckang effectofinterfacialconductivityonelectricalcharacteristicsofnegativecapacitancefieldeffecttransistors
AT lytian effectofinterfacialconductivityonelectricalcharacteristicsofnegativecapacitancefieldeffecttransistors
AT kxiong effectofinterfacialconductivityonelectricalcharacteristicsofnegativecapacitancefieldeffecttransistors
AT gli effectofinterfacialconductivityonelectricalcharacteristicsofnegativecapacitancefieldeffecttransistors
AT mhtang effectofinterfacialconductivityonelectricalcharacteristicsofnegativecapacitancefieldeffecttransistors
AT zli effectofinterfacialconductivityonelectricalcharacteristicsofnegativecapacitancefieldeffecttransistors