Design Band Energy diagram of SnO2/CdS-CdTe Thin Film Heterojunction Using I-V and C-V Measurements
SnO2/CdS-CdTe heterojunction has been fabricated by thermal evaporation technique, 0.05 µm thicknesses of SnO2 nanostructure was evaporated as thin layer to be used as an antireflection and as transparent conducting oxide. The prepared cell has been annealed at 573K for 180 minutes. The general morp...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2014-03-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_102478_b8bbb9384a8f637442072798bf8dae95.pdf |
| _version_ | 1827358635509940224 |
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| author | Rasha A. Abdullah Mohammed. A. Razooqi Nada M. Saeed |
| author_facet | Rasha A. Abdullah Mohammed. A. Razooqi Nada M. Saeed |
| author_sort | Rasha A. Abdullah |
| collection | DOAJ |
| description | SnO2/CdS-CdTe heterojunction has been fabricated by thermal evaporation technique, 0.05 µm thicknesses of SnO2 nanostructure was evaporated as thin layer to be used as an antireflection and as transparent conducting oxide. The prepared cell has been annealed at 573K for 180 minutes. The general morphology of SnO2 films was imaged by using Atomic Force Microscope (AFM), the image shows that the average grain size of the prepared film is constructed from nanostructure of dimensions in order of 72 nm. There are two wide peaks were presents at the x-ray pattern which were refers to SnO2 and is in agreement with the literature of American Standard of Testing Materials (ASTM). The capacitance- voltage a measurement has studied at 102 Hz frequency, the capacitance- voltage measurements indicated that these cells are abrupt. The capacitance at zero bias, built in voltage, zero bias depletion region width and the carrier concentration have been calculated. The carrier transport mechanism for SnO2/CdS-CdTe heterojunction in dark is tunneling – recombination. The value of ideality factor is 1.56 and the reverse saturation current is 9.6×10-10A. Band energy lineup for SnO2/ n-CdS-p-CdTe heterojunction has been investigated by using I-V and C-V measurements. |
| first_indexed | 2024-03-08T06:13:49Z |
| format | Article |
| id | doaj.art-cc54e61c78284ad89e2e0bdb85ab92e5 |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:13:49Z |
| publishDate | 2014-03-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-cc54e61c78284ad89e2e0bdb85ab92e52024-02-04T17:30:14ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582014-03-01323B60761410.30684/etj.32.3B.21102478Design Band Energy diagram of SnO2/CdS-CdTe Thin Film Heterojunction Using I-V and C-V MeasurementsRasha A. AbdullahMohammed. A. RazooqiNada M. SaeedSnO2/CdS-CdTe heterojunction has been fabricated by thermal evaporation technique, 0.05 µm thicknesses of SnO2 nanostructure was evaporated as thin layer to be used as an antireflection and as transparent conducting oxide. The prepared cell has been annealed at 573K for 180 minutes. The general morphology of SnO2 films was imaged by using Atomic Force Microscope (AFM), the image shows that the average grain size of the prepared film is constructed from nanostructure of dimensions in order of 72 nm. There are two wide peaks were presents at the x-ray pattern which were refers to SnO2 and is in agreement with the literature of American Standard of Testing Materials (ASTM). The capacitance- voltage a measurement has studied at 102 Hz frequency, the capacitance- voltage measurements indicated that these cells are abrupt. The capacitance at zero bias, built in voltage, zero bias depletion region width and the carrier concentration have been calculated. The carrier transport mechanism for SnO2/CdS-CdTe heterojunction in dark is tunneling – recombination. The value of ideality factor is 1.56 and the reverse saturation current is 9.6×10-10A. Band energy lineup for SnO2/ n-CdS-p-CdTe heterojunction has been investigated by using I-V and C-V measurements.https://etj.uotechnology.edu.iq/article_102478_b8bbb9384a8f637442072798bf8dae95.pdfcdscdte heterojunctionv measurementsenergy band diagram |
| spellingShingle | Rasha A. Abdullah Mohammed. A. Razooqi Nada M. Saeed Design Band Energy diagram of SnO2/CdS-CdTe Thin Film Heterojunction Using I-V and C-V Measurements Engineering and Technology Journal cds cdte heterojunction v measurements energy band diagram |
| title | Design Band Energy diagram of SnO2/CdS-CdTe Thin Film Heterojunction Using I-V and C-V Measurements |
| title_full | Design Band Energy diagram of SnO2/CdS-CdTe Thin Film Heterojunction Using I-V and C-V Measurements |
| title_fullStr | Design Band Energy diagram of SnO2/CdS-CdTe Thin Film Heterojunction Using I-V and C-V Measurements |
| title_full_unstemmed | Design Band Energy diagram of SnO2/CdS-CdTe Thin Film Heterojunction Using I-V and C-V Measurements |
| title_short | Design Band Energy diagram of SnO2/CdS-CdTe Thin Film Heterojunction Using I-V and C-V Measurements |
| title_sort | design band energy diagram of sno2 cds cdte thin film heterojunction using i v and c v measurements |
| topic | cds cdte heterojunction v measurements energy band diagram |
| url | https://etj.uotechnology.edu.iq/article_102478_b8bbb9384a8f637442072798bf8dae95.pdf |
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