Terahertz Spectroscopy of Thermal Radiation from AlGaN/GaN Heterostructure on Sapphire at Low Temperatures
Terahertz spectroscopy of thermal radiation from electrically pumped AlGaN/GaN structures on sapphire substrate was investigated in this work. Comparison of experimental THz spectroscopy results to theoretical spectra calculations shows that thermal radiation of the sample lattice is the main mechan...
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MDPI AG
2020-01-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/10/3/851 |
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| author | Ignas Grigelionis Irmantas Kašalynas |
| author_facet | Ignas Grigelionis Irmantas Kašalynas |
| author_sort | Ignas Grigelionis |
| collection | DOAJ |
| description | Terahertz spectroscopy of thermal radiation from electrically pumped AlGaN/GaN structures on sapphire substrate was investigated in this work. Comparison of experimental THz spectroscopy results to theoretical spectra calculations shows that thermal radiation of the sample lattice is the main mechanism causing the emission above <inline-formula> <math display="inline"> <semantics> <mrow> <mi>T</mi> <mo>=</mo> <mn>155</mn> </mrow> </semantics> </math> </inline-formula> K, and it is mainly influenced by sapphire substrate. Here, the emission was attributed to the radiative electron transitions in shallow impurities and nitrogen vacancies as well as to radiative decay of longitudinal optical phonons (387 cm<inline-formula> <math display="inline"> <semantics> <msup> <mrow></mrow> <mrow> <mo>-</mo> <mn>1</mn> </mrow> </msup> </semantics> </math> </inline-formula>) in sapphire substrate. We have successfully demonstrated that THz emission spectroscopy can be used to define the temperature at which thermal emission from AlGaN/GaN HEMT structures dominates the emission spectrum. |
| first_indexed | 2024-12-11T23:57:23Z |
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| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-12-11T23:57:23Z |
| publishDate | 2020-01-01 |
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| spelling | doaj.art-cc64ae3e49c448a480352521a4bcbe252022-12-22T00:45:20ZengMDPI AGApplied Sciences2076-34172020-01-0110385110.3390/app10030851app10030851Terahertz Spectroscopy of Thermal Radiation from AlGaN/GaN Heterostructure on Sapphire at Low TemperaturesIgnas Grigelionis0Irmantas Kašalynas1Center for Physical Sciences and Technology, Saulėtekio al. 3, LT-10257 Vilnius, LithuaniaCenter for Physical Sciences and Technology, Saulėtekio al. 3, LT-10257 Vilnius, LithuaniaTerahertz spectroscopy of thermal radiation from electrically pumped AlGaN/GaN structures on sapphire substrate was investigated in this work. Comparison of experimental THz spectroscopy results to theoretical spectra calculations shows that thermal radiation of the sample lattice is the main mechanism causing the emission above <inline-formula> <math display="inline"> <semantics> <mrow> <mi>T</mi> <mo>=</mo> <mn>155</mn> </mrow> </semantics> </math> </inline-formula> K, and it is mainly influenced by sapphire substrate. Here, the emission was attributed to the radiative electron transitions in shallow impurities and nitrogen vacancies as well as to radiative decay of longitudinal optical phonons (387 cm<inline-formula> <math display="inline"> <semantics> <msup> <mrow></mrow> <mrow> <mo>-</mo> <mn>1</mn> </mrow> </msup> </semantics> </math> </inline-formula>) in sapphire substrate. We have successfully demonstrated that THz emission spectroscopy can be used to define the temperature at which thermal emission from AlGaN/GaN HEMT structures dominates the emission spectrum.https://www.mdpi.com/2076-3417/10/3/851algan/gan heterostructureterahertz spectroscopyelectroluminescencethermal radiation |
| spellingShingle | Ignas Grigelionis Irmantas Kašalynas Terahertz Spectroscopy of Thermal Radiation from AlGaN/GaN Heterostructure on Sapphire at Low Temperatures Applied Sciences algan/gan heterostructure terahertz spectroscopy electroluminescence thermal radiation |
| title | Terahertz Spectroscopy of Thermal Radiation from AlGaN/GaN Heterostructure on Sapphire at Low Temperatures |
| title_full | Terahertz Spectroscopy of Thermal Radiation from AlGaN/GaN Heterostructure on Sapphire at Low Temperatures |
| title_fullStr | Terahertz Spectroscopy of Thermal Radiation from AlGaN/GaN Heterostructure on Sapphire at Low Temperatures |
| title_full_unstemmed | Terahertz Spectroscopy of Thermal Radiation from AlGaN/GaN Heterostructure on Sapphire at Low Temperatures |
| title_short | Terahertz Spectroscopy of Thermal Radiation from AlGaN/GaN Heterostructure on Sapphire at Low Temperatures |
| title_sort | terahertz spectroscopy of thermal radiation from algan gan heterostructure on sapphire at low temperatures |
| topic | algan/gan heterostructure terahertz spectroscopy electroluminescence thermal radiation |
| url | https://www.mdpi.com/2076-3417/10/3/851 |
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