Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate
Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in {105} pits are systematically i...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2014-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4901179 |
| _version_ | 1819141109457092608 |
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| author | Han Ye Zhongyuan Yu |
| author_facet | Han Ye Zhongyuan Yu |
| author_sort | Han Ye |
| collection | DOAJ |
| description | Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in {105} pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications. |
| first_indexed | 2024-12-22T11:49:13Z |
| format | Article |
| id | doaj.art-cc6c523c6b9340f9bd4a3c9f5a506ebe |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-22T11:49:13Z |
| publishDate | 2014-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-cc6c523c6b9340f9bd4a3c9f5a506ebe2022-12-21T18:27:03ZengAIP Publishing LLCAIP Advances2158-32262014-11-01411117104117104-1010.1063/1.4901179002411ADVElectronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrateHan Ye0Zhongyuan Yu1State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, P.R.ChinaState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, P.R.ChinaPatterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in {105} pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.http://dx.doi.org/10.1063/1.4901179 |
| spellingShingle | Han Ye Zhongyuan Yu Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate AIP Advances |
| title | Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate |
| title_full | Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate |
| title_fullStr | Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate |
| title_full_unstemmed | Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate |
| title_short | Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate |
| title_sort | electronic structures of gesi nanoislands grown on pit patterned si 001 substrate |
| url | http://dx.doi.org/10.1063/1.4901179 |
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