Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer
Abstract The full utilization of two-dimensional transition metal dichalcogenides (2D TMDCs) faces several challenges, among which is realizing uniform material deposition on the 2D surface. Typical strategies to enable material growth lead to a poor interface quality, degrading the 2D TMDC’s proper...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-03-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-024-00464-x |
| _version_ | 1797233555311427584 |
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| author | P.-J. Wyndaele J.-F. de Marneffe S. Sergeant C. J. L. de la Rosa S. Brems A. M. Caro S. De Gendt |
| author_facet | P.-J. Wyndaele J.-F. de Marneffe S. Sergeant C. J. L. de la Rosa S. Brems A. M. Caro S. De Gendt |
| author_sort | P.-J. Wyndaele |
| collection | DOAJ |
| description | Abstract The full utilization of two-dimensional transition metal dichalcogenides (2D TMDCs) faces several challenges, among which is realizing uniform material deposition on the 2D surface. Typical strategies to enable material growth lead to a poor interface quality, degrading the 2D TMDC’s properties. In this work, a sacrificial, graphene oxide-based seeding layer is used (1) as passivation layer, protecting the underlying 2D TMDC and (2) as nucleation layer, enabling uniform material growth. Graphene is transferred on monolayer WS2, establishing a high-quality van der Waals interface. After transfer, the polymeric residues on graphene are cleaned via a combination of wet- and dry treatments and functionalized via dry UV/O3 oxidation. The rate of graphene oxidation is shown to be substrate dependent, which is explained by UV light-induced ultrafast charge transfer between the graphene and WS2 monolayer. The carbon-oxygen functionalities serve as nucleation sites in a subsequent HfO2 ALD process, achieving more uniform dielectric growth and faster layer closure compared to direct deposition. The graphene-based nucleation- / passivation approach offers adaptability, allowing for tailored surface chemistry to enable any alternative material growth, while maintaining a prefect van der Waals interface. |
| first_indexed | 2024-04-24T16:18:02Z |
| format | Article |
| id | doaj.art-ccc03cc112f3408c89471794b1980979 |
| institution | Directory Open Access Journal |
| issn | 2397-7132 |
| language | English |
| last_indexed | 2024-04-24T16:18:02Z |
| publishDate | 2024-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj.art-ccc03cc112f3408c89471794b19809792024-03-31T11:22:21ZengNature Portfolionpj 2D Materials and Applications2397-71322024-03-018111110.1038/s41699-024-00464-xEnhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layerP.-J. Wyndaele0J.-F. de Marneffe1S. Sergeant2C. J. L. de la Rosa3S. Brems4A. M. Caro5S. De Gendt6Katholieke UniversiteitimecimecimecimecASMKatholieke UniversiteitAbstract The full utilization of two-dimensional transition metal dichalcogenides (2D TMDCs) faces several challenges, among which is realizing uniform material deposition on the 2D surface. Typical strategies to enable material growth lead to a poor interface quality, degrading the 2D TMDC’s properties. In this work, a sacrificial, graphene oxide-based seeding layer is used (1) as passivation layer, protecting the underlying 2D TMDC and (2) as nucleation layer, enabling uniform material growth. Graphene is transferred on monolayer WS2, establishing a high-quality van der Waals interface. After transfer, the polymeric residues on graphene are cleaned via a combination of wet- and dry treatments and functionalized via dry UV/O3 oxidation. The rate of graphene oxidation is shown to be substrate dependent, which is explained by UV light-induced ultrafast charge transfer between the graphene and WS2 monolayer. The carbon-oxygen functionalities serve as nucleation sites in a subsequent HfO2 ALD process, achieving more uniform dielectric growth and faster layer closure compared to direct deposition. The graphene-based nucleation- / passivation approach offers adaptability, allowing for tailored surface chemistry to enable any alternative material growth, while maintaining a prefect van der Waals interface.https://doi.org/10.1038/s41699-024-00464-x |
| spellingShingle | P.-J. Wyndaele J.-F. de Marneffe S. Sergeant C. J. L. de la Rosa S. Brems A. M. Caro S. De Gendt Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer npj 2D Materials and Applications |
| title | Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer |
| title_full | Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer |
| title_fullStr | Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer |
| title_full_unstemmed | Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer |
| title_short | Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer |
| title_sort | enhancing dielectric passivation on monolayer ws2 via a sacrificial graphene oxide seeding layer |
| url | https://doi.org/10.1038/s41699-024-00464-x |
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