Topological Phase Transitions Driven by Sn Doping in (Mn<sub>1−x</sub>Sn<sub>x</sub>)Bi<sub>2</sub>Te<sub>4</sub>

Topological Phase Transitions Driven by Sn Doping in (Mn<sub>1−x</sub>Sn<sub>x</sub>)Bi<sub>2</sub>Te<sub>4</sub>

The antiferromagnetic ordering that MnBi<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Te&...

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Bibliographic Details
Main Authors:	Artem V. Tarasov, Tatiana P. Makarova, Dmitry A. Estyunin, Alexander V. Eryzhenkov, Ilya I. Klimovskikh, Vladimir A. Golyashov, Konstantin A. Kokh, Oleg E. Tereshchenko, Alexander M. Shikin
Format:	Article
Language:	English
Published:	MDPI AG 2023-02-01
Series:	Symmetry
Subjects:	antiferromagnetic topological insulator topological phase transitions ab initio calculations electronic structure doping
Online Access:	https://www.mdpi.com/2073-8994/15/2/469

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