Resistive Low-Temperature Sensor Based on the SiO<sub>2</sub>ZrO<sub>2</sub> Film for Detection of High Concentrations of NO<sub>2</sub> Gas

The SiO<sub>2</sub>ZrO<sub>2</sub> composite films were prepared by means of sol-gel technology and characterized by scanning electron microscopy, energy dispersive X-ray (EDX) analysis, and X-ray diffraction. The presence of the stable monoclinic ZrO<sub>2</sub>...

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Bibliographic Details
Main Authors: Tatiana N. Myasoedova, Tatiana S. Mikhailova, Galina E. Yalovega, Nina K. Plugotarenko
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Chemosensors
Subjects:
Online Access:https://www.mdpi.com/2227-9040/6/4/67
Description
Summary:The SiO<sub>2</sub>ZrO<sub>2</sub> composite films were prepared by means of sol-gel technology and characterized by scanning electron microscopy, energy dispersive X-ray (EDX) analysis, and X-ray diffraction. The presence of the stable monoclinic ZrO<sub>2</sub> with an impurity of tetragonal phases is shown. The film surface is characterized by the presence of ZrOCl<sub>2</sub>&#183;6H<sub>2</sub>O or ZrCl(OH)/ZrCl(OH)<sub>2</sub> grains. The crystallite size negligibly depends on the annealing temperature of the film and amount to 10&#8315;12 nm and 9&#8315;12 nm for the films thermally treated at 200 &#176;C and 500 &#176;C, respectively. The film&#8217;s resistance is rather sensitive to the presence of NO<sub>2</sub> impurities in the air at a low operating temperature (25 &#176;C). Accelerated stability tests of the initial resistance showed high stability and reproducibility of the sensor based on the SiO<sub>2</sub>ZrO<sub>2</sub> film thermally treated at 500 &#176;C.
ISSN:2227-9040