Resistive Low-Temperature Sensor Based on the SiO<sub>2</sub>ZrO<sub>2</sub> Film for Detection of High Concentrations of NO<sub>2</sub> Gas
The SiO<sub>2</sub>ZrO<sub>2</sub> composite films were prepared by means of sol-gel technology and characterized by scanning electron microscopy, energy dispersive X-ray (EDX) analysis, and X-ray diffraction. The presence of the stable monoclinic ZrO<sub>2</sub>...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-12-01
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Series: | Chemosensors |
Subjects: | |
Online Access: | https://www.mdpi.com/2227-9040/6/4/67 |
Summary: | The SiO<sub>2</sub>ZrO<sub>2</sub> composite films were prepared by means of sol-gel technology and characterized by scanning electron microscopy, energy dispersive X-ray (EDX) analysis, and X-ray diffraction. The presence of the stable monoclinic ZrO<sub>2</sub> with an impurity of tetragonal phases is shown. The film surface is characterized by the presence of ZrOCl<sub>2</sub>·6H<sub>2</sub>O or ZrCl(OH)/ZrCl(OH)<sub>2</sub> grains. The crystallite size negligibly depends on the annealing temperature of the film and amount to 10⁻12 nm and 9⁻12 nm for the films thermally treated at 200 °C and 500 °C, respectively. The film’s resistance is rather sensitive to the presence of NO<sub>2</sub> impurities in the air at a low operating temperature (25 °C). Accelerated stability tests of the initial resistance showed high stability and reproducibility of the sensor based on the SiO<sub>2</sub>ZrO<sub>2</sub> film thermally treated at 500 °C. |
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ISSN: | 2227-9040 |