Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications
In this paper, gradual and symmetrical long-term potentiation (LTP) and long-term depression (LTD) were achieved by applying the optimal electrical pulse condition of the interfacial phase-change memory (iPCM) based on a superlattice (SL) structure fabricated by stacking GeTe/Sb<sub>2</sub&...
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| Format: | Article |
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MDPI AG
2020-08-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/9/8/1268 |
| _version_ | 1797559713365229568 |
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| author | Shinyoung Kang Juyoung Lee Myounggon Kang Yunheub Song |
| author_facet | Shinyoung Kang Juyoung Lee Myounggon Kang Yunheub Song |
| author_sort | Shinyoung Kang |
| collection | DOAJ |
| description | In this paper, gradual and symmetrical long-term potentiation (LTP) and long-term depression (LTD) were achieved by applying the optimal electrical pulse condition of the interfacial phase-change memory (iPCM) based on a superlattice (SL) structure fabricated by stacking GeTe/Sb<sub>2</sub>Te<sub>3</sub> alternately to implement an artificial synapse in neuromorphic computing. Furthermore, conventional phase-change random access memory (PCRAM) based on a Ge–Sb–Te (GST) alloy with an identical bottom electrode contact size was fabricated to compare the electrical characteristics. The results showed a reduction in the reset energy consumption of the GeTe/Sb<sub>2</sub>Te<sub>3</sub> (GT/ST) iPCM by more than 69% of the GST alloy for each bottom electrode contact size. Additionally, the GT/ST iPCM achieved gradual conductance tuning and 90.6% symmetry between LTP and LTD with a relatively unsophisticated pulse scheme. Based on the above results, GT/ST iPCM is anticipated to be exploitable as a synaptic device used for brain-inspired computing and to be utilized for next-generation non-volatile memory. |
| first_indexed | 2024-03-10T17:49:14Z |
| format | Article |
| id | doaj.art-ccd8dcc95e1e4e238732f54f618943bf |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T17:49:14Z |
| publishDate | 2020-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-ccd8dcc95e1e4e238732f54f618943bf2023-11-20T09:25:16ZengMDPI AGElectronics2079-92922020-08-0198126810.3390/electronics9081268Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse ApplicationsShinyoung Kang0Juyoung Lee1Myounggon Kang2Yunheub Song3Department of Electronic Engineering, Hanyang University, Seoul 04763, KoreaDepartment of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, KoreaDepartment of Electronics Engineering, Korea National University of Transportation, 50 Daehak-ro, Chungju-si, Chungbuk 380-702, KoreaDepartment of Electronic Engineering, Hanyang University, Seoul 04763, KoreaIn this paper, gradual and symmetrical long-term potentiation (LTP) and long-term depression (LTD) were achieved by applying the optimal electrical pulse condition of the interfacial phase-change memory (iPCM) based on a superlattice (SL) structure fabricated by stacking GeTe/Sb<sub>2</sub>Te<sub>3</sub> alternately to implement an artificial synapse in neuromorphic computing. Furthermore, conventional phase-change random access memory (PCRAM) based on a Ge–Sb–Te (GST) alloy with an identical bottom electrode contact size was fabricated to compare the electrical characteristics. The results showed a reduction in the reset energy consumption of the GeTe/Sb<sub>2</sub>Te<sub>3</sub> (GT/ST) iPCM by more than 69% of the GST alloy for each bottom electrode contact size. Additionally, the GT/ST iPCM achieved gradual conductance tuning and 90.6% symmetry between LTP and LTD with a relatively unsophisticated pulse scheme. Based on the above results, GT/ST iPCM is anticipated to be exploitable as a synaptic device used for brain-inspired computing and to be utilized for next-generation non-volatile memory.https://www.mdpi.com/2079-9292/9/8/1268interfacial phase-change memoryphase-change memoryartificial synaptic devicesuperlatticeneuromorphic devices |
| spellingShingle | Shinyoung Kang Juyoung Lee Myounggon Kang Yunheub Song Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications Electronics interfacial phase-change memory phase-change memory artificial synaptic device superlattice neuromorphic devices |
| title | Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications |
| title_full | Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications |
| title_fullStr | Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications |
| title_full_unstemmed | Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications |
| title_short | Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications |
| title_sort | achievement of gradual conductance characteristics based on interfacial phase change memory for artificial synapse applications |
| topic | interfacial phase-change memory phase-change memory artificial synaptic device superlattice neuromorphic devices |
| url | https://www.mdpi.com/2079-9292/9/8/1268 |
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