Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices
Piezoelectric devices transduce mechanical energy to electrical energy by elastic deformation, which distorts local dipoles in crystalline materials. Amongst electromechanical sensors, piezoelectric devices are advantageous because of their scalability, light weight, low power consumption, and readi...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-07-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/20/14/3872 |
| _version_ | 1797562721104822272 |
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| author | Hongseok Oh Shadi A. Dayeh |
| author_facet | Hongseok Oh Shadi A. Dayeh |
| author_sort | Hongseok Oh |
| collection | DOAJ |
| description | Piezoelectric devices transduce mechanical energy to electrical energy by elastic deformation, which distorts local dipoles in crystalline materials. Amongst electromechanical sensors, piezoelectric devices are advantageous because of their scalability, light weight, low power consumption, and readily built-in amplification and ability for multiplexing, which are essential for wearables, medical devices, and robotics. This paper reviews recent progress in active piezoelectric devices. We classify these piezoelectric devices according to the material dimensionality and present physics-based device models to describe and quantify the piezoelectric response for one-dimensional nanowires, emerging two-dimensional materials, and three-dimensional thin films. Different transduction mechanisms and state-of-the-art devices for each type of material are reviewed. Perspectives on the future applications of active piezoelectric devices are discussed. |
| first_indexed | 2024-03-10T18:32:57Z |
| format | Article |
| id | doaj.art-ccda0fa2fb274ed88e5b8421686dc102 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-10T18:32:57Z |
| publishDate | 2020-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-ccda0fa2fb274ed88e5b8421686dc1022023-11-20T06:29:22ZengMDPI AGSensors1424-82202020-07-012014387210.3390/s20143872Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor DevicesHongseok Oh0Shadi A. Dayeh1Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USAIntegrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USAPiezoelectric devices transduce mechanical energy to electrical energy by elastic deformation, which distorts local dipoles in crystalline materials. Amongst electromechanical sensors, piezoelectric devices are advantageous because of their scalability, light weight, low power consumption, and readily built-in amplification and ability for multiplexing, which are essential for wearables, medical devices, and robotics. This paper reviews recent progress in active piezoelectric devices. We classify these piezoelectric devices according to the material dimensionality and present physics-based device models to describe and quantify the piezoelectric response for one-dimensional nanowires, emerging two-dimensional materials, and three-dimensional thin films. Different transduction mechanisms and state-of-the-art devices for each type of material are reviewed. Perspectives on the future applications of active piezoelectric devices are discussed.https://www.mdpi.com/1424-8220/20/14/3872piezoelectricsensortransport modelnanowireZnOSchottky diode |
| spellingShingle | Hongseok Oh Shadi A. Dayeh Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices Sensors piezoelectric sensor transport model nanowire ZnO Schottky diode |
| title | Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices |
| title_full | Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices |
| title_fullStr | Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices |
| title_full_unstemmed | Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices |
| title_short | Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices |
| title_sort | physics based device models and progress review for active piezoelectric semiconductor devices |
| topic | piezoelectric sensor transport model nanowire ZnO Schottky diode |
| url | https://www.mdpi.com/1424-8220/20/14/3872 |
| work_keys_str_mv | AT hongseokoh physicsbaseddevicemodelsandprogressreviewforactivepiezoelectricsemiconductordevices AT shadiadayeh physicsbaseddevicemodelsandprogressreviewforactivepiezoelectricsemiconductordevices |