Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices

Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices

NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits in checking the excessive increase in errors,...

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Bibliographic Details
Main Authors: Seung-Ho Lim, Ki-Woong Park
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Sensors
Subjects:
NAND flash memory
P/E cycle
compression
adaptive ECC
RAID scattering
stripe log
Online Access:https://www.mdpi.com/1424-8220/20/10/2952

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