Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices
NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits in checking the excessive increase in errors,...
Main Authors: | Seung-Ho Lim, Ki-Woong Park |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-05-01
|
Series: | Sensors |
Subjects: | |
Online Access: | https://www.mdpi.com/1424-8220/20/10/2952 |
Similar Items
-
3D NAND Flash Based on Planar Cells
by: Andrea Silvagni
Published: (2017-10-01) -
Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices
by: Alessandro S. Spinelli, et al.
Published: (2017-04-01) -
A Crash Recovery Scheme for a Hybrid Mapping FTL in NAND Flash Storage Devices
by: Jong-Hyeok Park, et al.
Published: (2021-02-01) -
A Low-Power BL Path Design for NAND Flash Based on an Existing NAND Interface
by: Hikaru Makino, et al.
Published: (2024-02-01) -
Differentiated Protection and Hot/Cold-Aware Data Placement Policies through k-Means Clustering Analysis for 3D-NAND SSDs
by: Seungwoo Son, et al.
Published: (2022-01-01)