Microscopic origin of low frequency noise in MoS2 field-effect transistors
We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise wit...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2014-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4895955 |
| _version_ | 1811218508114034688 |
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| author | Subhamoy Ghatak Sumanta Mukherjee Manish Jain D. D. Sarma Arindam Ghosh |
| author_facet | Subhamoy Ghatak Sumanta Mukherjee Manish Jain D. D. Sarma Arindam Ghosh |
| author_sort | Subhamoy Ghatak |
| collection | DOAJ |
| description | We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO2 interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS2 contacts also play a significant role in determining noise magnitude in these devices. |
| first_indexed | 2024-04-12T07:11:02Z |
| format | Article |
| id | doaj.art-ccf6db2a13484df6954661762e08dc72 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-12T07:11:02Z |
| publishDate | 2014-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-ccf6db2a13484df6954661762e08dc722022-12-22T03:42:38ZengAIP Publishing LLCAPL Materials2166-532X2014-09-0129092515092515-710.1063/1.4895955019492APMMicroscopic origin of low frequency noise in MoS2 field-effect transistorsSubhamoy Ghatak0Sumanta Mukherjee1Manish Jain2D. D. Sarma3Arindam Ghosh4Department of Physics, Indian Institute of Science, Bangalore 560 012, IndiaSolid State Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, IndiaDepartment of Physics, Indian Institute of Science, Bangalore 560 012, IndiaSolid State Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, IndiaDepartment of Physics, Indian Institute of Science, Bangalore 560 012, IndiaWe report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO2 interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS2 contacts also play a significant role in determining noise magnitude in these devices.http://dx.doi.org/10.1063/1.4895955 |
| spellingShingle | Subhamoy Ghatak Sumanta Mukherjee Manish Jain D. D. Sarma Arindam Ghosh Microscopic origin of low frequency noise in MoS2 field-effect transistors APL Materials |
| title | Microscopic origin of low frequency noise in MoS2 field-effect transistors |
| title_full | Microscopic origin of low frequency noise in MoS2 field-effect transistors |
| title_fullStr | Microscopic origin of low frequency noise in MoS2 field-effect transistors |
| title_full_unstemmed | Microscopic origin of low frequency noise in MoS2 field-effect transistors |
| title_short | Microscopic origin of low frequency noise in MoS2 field-effect transistors |
| title_sort | microscopic origin of low frequency noise in mos2 field effect transistors |
| url | http://dx.doi.org/10.1063/1.4895955 |
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