Microscopic origin of low frequency noise in MoS2 field-effect transistors
We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise wit...
Main Authors: | Subhamoy Ghatak, Sumanta Mukherjee, Manish Jain, D. D. Sarma, Arindam Ghosh |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2014-09-01
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Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/1.4895955 |
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