Microscopic origin of low frequency noise in MoS2 field-effect transistors

Microscopic origin of low frequency noise in MoS2 field-effect transistors

We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise wit...

Full description

Bibliographic Details
Main Authors:	Subhamoy Ghatak, Sumanta Mukherjee, Manish Jain, D. D. Sarma, Arindam Ghosh
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2014-09-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.4895955

Similar Items

Current crowding mediated large contact noise in graphene field-effect transistors
by: Paritosh Karnatak, et al.
Published: (2016-12-01)

MoS2 nanotube field effect transistors
by: M. Strojnik, et al.
Published: (2014-09-01)

Hysteresis in As-Synthesized MoS<sub>2</sub> Transistors: Origin and Sensing Perspectives
by: Carlos Marquez, et al.
Published: (2021-05-01)

Nature and origin of unusual properties in chemically exfoliated 2D MoS2
by: Debasmita Pariari, et al.
Published: (2020-04-01)

Selective etching in graphene–MoS2 heterostructures for fabricating graphene-contacted MoS2 transistors
by: Zeliang Sun, et al.
Published: (2020-03-01)

The Positive Effects of Hydrophobic Fluoropolymers on the Electrical Properties of MoS2 Transistors
by: Somayyeh Rahimi, et al.
Published: (2016-08-01)

A Photoelectric-Stimulated MoS2 Transistor for Neuromorphic Engineering
by: Shuiyuan Wang, et al.
Published: (2019-01-01)

MoS₂/BiFeO₃-based solid-ionic transistor
by: Chen, Jieqiong
Published: (2022)

Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
by: Lin, Jiadan, et al.
Published: (2013)

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors
by: A. George, et al.
Published: (2021-01-01)

Towards complete band structure of microscopic MoS2 flakes
by: Babenkov Sergey, et al.
Published: (2022-01-01)

Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics
by: Daobing Zeng, et al.
Published: (2024-02-01)

Spin-valley locking for in-gap quantum dots in a MoS₂ transistor
by: Krishnan, Radha, et al.
Published: (2023)

A Physical Model for the Hysteresis in MoS<sub>2</sub> Transistors
by: Theresia Knobloch, et al.
Published: (2018-01-01)

Optoelectronic synapse using monolayer MoS2 field effect transistors
by: Molla Manjurul Islam, et al.
Published: (2020-12-01)

Benchmarking monolayer MoS2 and WS2 field-effect transistors
by: Amritanand Sebastian, et al.
Published: (2021-01-01)

Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> Transistors
by: Qingguo Gao, et al.
Published: (2021-06-01)

Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance
by: Guo, Yuxi, et al.
Published: (2021)

Modifying the Power and Performance of 2-Dimensional MoS2 Field Effect Transistors
by: Fulin Zhuo, et al.
Published: (2023-01-01)

Lateral heterostructures of WS2 and MoS2 monolayers for photo-synaptic transistor
by: Jaeseo Park, et al.
Published: (2024-03-01)

Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application
by: Nourbakhsh, Amirhasan, et al.
Published: (2017)

Harnessing defects for high-performance MoS2 tunneling field-effect transistors
by: Juan Lyu, et al.
Published: (2023-04-01)

Impact of device scaling on the electrical properties of MoS2 field-effect transistors
by: Goutham Arutchelvan, et al.
Published: (2021-03-01)

Back-gated Nb-doped MoS2 junctionless field-effect-transistors
by: Gioele Mirabelli, et al.
Published: (2016-02-01)

Monolayer MoS2-based nonvolatile transistors with a titanium nitride in the gate
by: Kailiang Huang, et al.
Published: (2019-12-01)

High-Performance CVD Bilayer MoS<sub>2</sub> Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics
by: Qingguo Gao, et al.
Published: (2021-04-01)

Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors
by: Yu. Yu. Illarionov, et al.
Published: (2024-02-01)

Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
by: Seongin Hong, et al.
Published: (2021-06-01)

Ultrashort vertical-channel MoS2 transistor using a self-aligned contact
by: Liting Liu, et al.
Published: (2024-01-01)

High performance MoS₂ transistors based on wafer-scale low-temperature MOCVD synthesis
by: Zhu, Jiadi
Published: (2022)

High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics
by: Young Ki Hong, et al.
Published: (2016-05-01)

Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate
by: Lan Liu, et al.
Published: (2017-06-01)

Probing the Field-Effect Transistor with Monolayer MoS<sub>2</sub> Prepared by APCVD
by: Tao Han, et al.
Published: (2019-08-01)

Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
by: Qilin Hua, et al.
Published: (2020-12-01)

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
by: Filippo Giannazzo, et al.
Published: (2017-01-01)

Low-frequency noise in advanced MOS devices /
by: 223100 Haartman, Martin von, et al.
Published: (2007)

Probing the Electronic and Opto-Electronic Properties of Multilayer MoS<sub>2</sub> Field-Effect Transistors at Low Temperatures
by: Sujoy Ghosh, et al.
Published: (2023-08-01)

Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
by: Rajesh Kappera, et al.
Published: (2014-09-01)

Probing defect dynamics in monolayer MoS2 via noise nanospectroscopy
by: Seung Hyun Song, et al.
Published: (2017-12-01)

Operation and modeling of the MOS transistor /
by: 353746 Tsividis, Yannis
Published: (1999)