Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt
GaN crystals are synthesized by recrystallization technique in Na-Li-Ca alloy melt under different N<sub>2</sub> pressure. X-ray powder diffraction results confirm that the structure of crystals is GaN with wurtzite type and there still have raw powders remaining. The total mass of GaN d...
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MDPI AG
2021-09-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/11/9/1058 |
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| author | Xi Wu Hongcheng Wang Dongxiong Ling Chuanyu Jia Wei Lü Ye Liu Fei Zhou Zhenrong Li |
| author_facet | Xi Wu Hongcheng Wang Dongxiong Ling Chuanyu Jia Wei Lü Ye Liu Fei Zhou Zhenrong Li |
| author_sort | Xi Wu |
| collection | DOAJ |
| description | GaN crystals are synthesized by recrystallization technique in Na-Li-Ca alloy melt under different N<sub>2</sub> pressure. X-ray powder diffraction results confirm that the structure of crystals is GaN with wurtzite type and there still have raw powders remaining. The total mass of GaN decreases with the nitrogen pressure reduces. No GaN crystals are found in the solution under N<sub>2</sub> pressure of 0.4 MPa. The morphologies of the crystal are mainly prism and pyramid. The size of the crystal increases when closer to the liquid surface. Raman spectra indicates that these crystals are stress-free and crystal grown at 3.6 MPa has high structural quality or low impurity concentrations. The results reveal that the solubility and supersaturation of the solution are controlled by N<sub>2</sub> pressure. The principle of GaN crystal synthesis by recrystallization is discussed. |
| first_indexed | 2024-03-10T07:46:50Z |
| format | Article |
| id | doaj.art-cd4c3f9620964bb3b75f772f6746d2d8 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T07:46:50Z |
| publishDate | 2021-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-cd4c3f9620964bb3b75f772f6746d2d82023-11-22T12:35:13ZengMDPI AGCrystals2073-43522021-09-01119105810.3390/cryst11091058Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy MeltXi Wu0Hongcheng Wang1Dongxiong Ling2Chuanyu Jia3Wei Lü4Ye Liu5Fei Zhou6Zhenrong Li7School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, ChinaSchool of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, ChinaSchool of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, ChinaSchool of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, ChinaSchool of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, ChinaSchool of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, ChinaSchool of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, ChinaElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaGaN crystals are synthesized by recrystallization technique in Na-Li-Ca alloy melt under different N<sub>2</sub> pressure. X-ray powder diffraction results confirm that the structure of crystals is GaN with wurtzite type and there still have raw powders remaining. The total mass of GaN decreases with the nitrogen pressure reduces. No GaN crystals are found in the solution under N<sub>2</sub> pressure of 0.4 MPa. The morphologies of the crystal are mainly prism and pyramid. The size of the crystal increases when closer to the liquid surface. Raman spectra indicates that these crystals are stress-free and crystal grown at 3.6 MPa has high structural quality or low impurity concentrations. The results reveal that the solubility and supersaturation of the solution are controlled by N<sub>2</sub> pressure. The principle of GaN crystal synthesis by recrystallization is discussed.https://www.mdpi.com/2073-4352/11/9/1058GaNflux methodrecrystallizationN<sub>2</sub> pressure |
| spellingShingle | Xi Wu Hongcheng Wang Dongxiong Ling Chuanyu Jia Wei Lü Ye Liu Fei Zhou Zhenrong Li Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt Crystals GaN flux method recrystallization N<sub>2</sub> pressure |
| title | Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt |
| title_full | Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt |
| title_fullStr | Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt |
| title_full_unstemmed | Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt |
| title_short | Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt |
| title_sort | synthesis of gan crystals by nitrogen pressure controlled recrystallization technique in na alloy melt |
| topic | GaN flux method recrystallization N<sub>2</sub> pressure |
| url | https://www.mdpi.com/2073-4352/11/9/1058 |
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