Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt

Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt

GaN crystals are synthesized by recrystallization technique in Na-Li-Ca alloy melt under different N<sub>2</sub> pressure. X-ray powder diffraction results confirm that the structure of crystals is GaN with wurtzite type and there still have raw powders remaining. The total mass of GaN d...

Full description

Bibliographic Details
Main Authors:	Xi Wu, Hongcheng Wang, Dongxiong Ling, Chuanyu Jia, Wei Lü, Ye Liu, Fei Zhou, Zhenrong Li
Format:	Article
Language:	English
Published:	MDPI AG 2021-09-01
Series:	Crystals
Subjects:	GaN flux method recrystallization N<sub>2</sub> pressure
Online Access:	https://www.mdpi.com/2073-4352/11/9/1058

Similar Items

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH<sub>3</sub> Flux
by: Zhenyu Chen, et al.
Published: (2023-01-01)

The Role of GaN in the Heterostructure WS<sub>2</sub>/GaN for SERS Applications
by: Tsung-Shine Ko, et al.
Published: (2023-04-01)

GaN Monolithic PWM Generator With Dynamic Offset Compensation
by: Katia Samperi, et al.
Published: (2023-01-01)

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps
by: Yu-Lin Song, et al.
Published: (2021-06-01)

Advances in GaN Crystals and Their Applications
by: Ikai Lo
Published: (2018-03-01)

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices
by: Tadao Hashimoto, et al.
Published: (2022-08-01)

p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT
by: Xiaoyu Ding, et al.
Published: (2023-03-01)

Research Progress and Development Prospects of Enhanced GaN HEMTs
by: Lili Han, et al.
Published: (2023-06-01)

Current Drops in CF<sub>4</sub> Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient
by: Ying Ma, et al.
Published: (2023-04-01)

Subthreshold Characteristics of AlGaN/GaN MIS-FinFETs with Controlling Threshold Voltages
by: Quan Dai, et al.
Published: (2020-11-01)

MOCVD-grown β-Ga<sub>2</sub>O<sub>3</sub> as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor
by: Samiul Hasan, et al.
Published: (2023-01-01)

First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding
by: Li, Hanchao, et al.
Published: (2024)

GaN Vertical Transistors with Staircase Channels for High-Voltage Applications
by: Kuntal Barman, et al.
Published: (2023-01-01)

Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K
by: An Yang, et al.
Published: (2023-04-01)

Low-Power pH Sensor Based on Narrow Channel Open-Gated Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN HEMT and Package Integrated Polydimethylsiloxane Microchannels
by: Xianghong Yang, et al.
Published: (2020-11-01)

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
by: Sandupatla, Abhinay, et al.
Published: (2020)

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
by: Tae-Hyeon Kim, et al.
Published: (2021-03-01)

GaN Laser Diode Technology for Visible-Light Communications
by: Stephen P. Najda, et al.
Published: (2022-04-01)

Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication
by: Hyeon-Ji Kim, et al.
Published: (2023-10-01)

Diamond/GaN HEMTs: Where from and Where to?
by: Joana C. Mendes, et al.
Published: (2022-01-01)

Comprehensive Comparison of MOCVD- and LPCVD-SiN<sub>x</sub> Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications
by: Longge Deng, et al.
Published: (2023-11-01)

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric Layers
by: Yu-Shyan Lin, et al.
Published: (2023-05-01)

Optical Properties of GaN Thin Flim
by: Salma M. Shaban
Published: (2009-12-01)

Passivation of Surface States in GaN by NiO Particles
by: Martin Velazquez-Rizo, et al.
Published: (2022-01-01)

Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate
by: Nirupam Hatui, et al.
Published: (2022-07-01)

Enhanced Operational Characteristics Attained by Applying HfO<sub>2</sub> as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study
by: Jun-Hyeok Choi, et al.
Published: (2023-05-01)

Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure
by: Honghui Liu, et al.
Published: (2022-11-01)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
by: Haiping Wang, et al.
Published: (2022-12-01)

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN<sub>x</sub> Gate Dielectric at Different Temperatures
by: Dongsheng Zhao, et al.
Published: (2024-01-01)

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN<sub>x</sub>/SiON as Composite Gate Dielectric
by: Xiaodong Zhang, et al.
Published: (2022-03-01)

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side
by: Beibei Lv, et al.
Published: (2024-02-01)

Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTs
by: Myoung-Jin Kang, et al.
Published: (2020-09-01)

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors
by: Myeongsu Chae, et al.
Published: (2023-04-01)

Narrow Emission of Blue GaN-Based Vertical-Cavity Surface-Emitting Lasers With a Curved Mirror
by: Kentaro Hayashi, et al.
Published: (2022-01-01)

Synthesis of Single Crystal GaN Nanowires
by: Lining Fang, et al.
Published: (2016-05-01)

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology
by: Li-Fang Jia, et al.
Published: (2021-05-01)

A Ku-Band GaN-on-Si MMIC Power Amplifier with an Asymmetrical Output Combiner
by: Javier del Pino, et al.
Published: (2023-07-01)

Optimization of Ternary In<sub>x</sub>Ga<sub>1-x</sub>N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs
by: Yu-Chung Lin, et al.
Published: (2023-06-01)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
by: You-Chen Weng, et al.
Published: (2023-04-01)

Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices
by: Athith Krishna, et al.
Published: (2022-05-01)