Effect of uniaxial compressive stress with different orientations on the hole mobility of wurtzite GaN heterojunction quantum well
The influence of uniaxial compressive stress with different orientations to the current channel on the physical and transport properties of the wurtzite GaN heterojunction quantum well is investigated in this work. By using the six-band stress-dependent k × p Hamiltonian, accurate two-dimensional ph...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0089826 |