Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors
This paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced b...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2017-12-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/17/12/2841 |
| _version_ | 1798025728956039168 |
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| author | Eric G. Stevens Jeffrey A. Clayhold Hung Doan Robert P. Fabinski Jaroslav Hynecek Stephen L. Kosman Christopher Parks |
| author_facet | Eric G. Stevens Jeffrey A. Clayhold Hung Doan Robert P. Fabinski Jaroslav Hynecek Stephen L. Kosman Christopher Parks |
| author_sort | Eric G. Stevens |
| collection | DOAJ |
| description | This paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced by 6 dB. By reducing the depth of the shallow photodiode (PD) implants, the photodiode-to-vertical-charge-coupled-device (VCCD) transfer gate voltage required for no-lag operation was reduced by 3 V, and the electronic shutter voltage was reduced by 9 V. The thinner, surface pinning layer also resulted in a reduction of smear by 4 dB in the blue portion of the visible spectrum. For EMCCDs, gain aging was eliminated by providing an oxide-only dielectric under its multiplication phase, while retaining the oxide-nitride-oxide (ONO) gate dielectrics elsewhere in the device. |
| first_indexed | 2024-04-11T18:24:32Z |
| format | Article |
| id | doaj.art-cd643d7b4e3b4b41a64dfed987303cba |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-11T18:24:32Z |
| publishDate | 2017-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-cd643d7b4e3b4b41a64dfed987303cba2022-12-22T04:09:41ZengMDPI AGSensors1424-82202017-12-011712284110.3390/s17122841s17122841Recent Enhancements to Interline and Electron Multiplying CCD Image SensorsEric G. Stevens0Jeffrey A. Clayhold1Hung Doan2Robert P. Fabinski3Jaroslav Hynecek4Stephen L. Kosman5Christopher Parks6ON Semiconductor, 1964 Lake Avenue, Rochester, NY 14615, USAON Semiconductor, 1964 Lake Avenue, Rochester, NY 14615, USAON Semiconductor, 1964 Lake Avenue, Rochester, NY 14615, USAON Semiconductor, 1964 Lake Avenue, Rochester, NY 14615, USAON Semiconductor, 2660 Zanker Road, San Jose, CA 95134, USAON Semiconductor, 1964 Lake Avenue, Rochester, NY 14615, USAON Semiconductor, 1964 Lake Avenue, Rochester, NY 14615, USAThis paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced by 6 dB. By reducing the depth of the shallow photodiode (PD) implants, the photodiode-to-vertical-charge-coupled-device (VCCD) transfer gate voltage required for no-lag operation was reduced by 3 V, and the electronic shutter voltage was reduced by 9 V. The thinner, surface pinning layer also resulted in a reduction of smear by 4 dB in the blue portion of the visible spectrum. For EMCCDs, gain aging was eliminated by providing an oxide-only dielectric under its multiplication phase, while retaining the oxide-nitride-oxide (ONO) gate dielectrics elsewhere in the device.https://www.mdpi.com/1424-8220/17/12/2841interline CCDEMCCDquantum efficiencylow noisegain aging |
| spellingShingle | Eric G. Stevens Jeffrey A. Clayhold Hung Doan Robert P. Fabinski Jaroslav Hynecek Stephen L. Kosman Christopher Parks Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors Sensors interline CCD EMCCD quantum efficiency low noise gain aging |
| title | Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors |
| title_full | Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors |
| title_fullStr | Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors |
| title_full_unstemmed | Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors |
| title_short | Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors |
| title_sort | recent enhancements to interline and electron multiplying ccd image sensors |
| topic | interline CCD EMCCD quantum efficiency low noise gain aging |
| url | https://www.mdpi.com/1424-8220/17/12/2841 |
| work_keys_str_mv | AT ericgstevens recentenhancementstointerlineandelectronmultiplyingccdimagesensors AT jeffreyaclayhold recentenhancementstointerlineandelectronmultiplyingccdimagesensors AT hungdoan recentenhancementstointerlineandelectronmultiplyingccdimagesensors AT robertpfabinski recentenhancementstointerlineandelectronmultiplyingccdimagesensors AT jaroslavhynecek recentenhancementstointerlineandelectronmultiplyingccdimagesensors AT stephenlkosman recentenhancementstointerlineandelectronmultiplyingccdimagesensors AT christopherparks recentenhancementstointerlineandelectronmultiplyingccdimagesensors |