Controlled Synthesis of Ultrathin PtSe2 Nanosheets with Thickness‐Tunable Electrical and Magnetoelectrical Properties
Abstract Thickness‐dependent chemical and physical properties have gained tremendous interest since the emergence of two‐dimensional (2D) materials. Despite attractive prospects, the thickness‐controlled synthesis of ultrathin nanosheets remains an outstanding challenge. Here, a chemical vapor depos...
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| Format: | Article |
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Wiley
2022-01-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202103507 |
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| author | Huifang Ma Qi Qian Biao Qin Zhong Wan Ruixia Wu Bei Zhao Hongmei Zhang Zucheng Zhang Jia Li Zhengwei Zhang Bo Li Lin Wang Xidong Duan |
| author_facet | Huifang Ma Qi Qian Biao Qin Zhong Wan Ruixia Wu Bei Zhao Hongmei Zhang Zucheng Zhang Jia Li Zhengwei Zhang Bo Li Lin Wang Xidong Duan |
| author_sort | Huifang Ma |
| collection | DOAJ |
| description | Abstract Thickness‐dependent chemical and physical properties have gained tremendous interest since the emergence of two‐dimensional (2D) materials. Despite attractive prospects, the thickness‐controlled synthesis of ultrathin nanosheets remains an outstanding challenge. Here, a chemical vapor deposition (CVD) route is reported to controllably synthesize high‐quality PtSe2 nanosheets with tunable thickness and explore their thickness‐dependent electronic and magnetotransport properties. Raman spectroscopic studies demonstrate all Eg, A1g, A2u, and Eu modes are red shift in thicker nanosheets. Electrical measurements demonstrate the 1.7 nm thick nanosheet is a semiconductor with room temperature field‐effect mobility of 66 cm2 V−1 s−1 and on/off ratio of 106. The 2.3–3.8 nm thick nanosheets show slightly gated modulation with high field‐effect mobility up to 324 cm2 V−1 s−1 at room‐temperature. When the thickness is over 3.8 nm, the nanosheets show metallic behavior with conductivity and breakdown current density up to 6.8 × 105 S m–1 and 6.9 × 107 A cm−2, respectively. Interestingly, magnetoresistance (MR) studies reveal magnetic orders exist in this intrinsically non‐magnetic material system, as manifested by the thickness‐dependent Kondo effect, where both metal to insulator transition and negative MR appear upon cooling. Together, these studies suggest that PtSe2 is an intriguing system for both developing novel functional electronics and conducting fundamental 2D magnetism study. |
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| spelling | doaj.art-cd796f65a6b0435a8a59ec881893892e2022-12-21T17:22:19ZengWileyAdvanced Science2198-38442022-01-0191n/an/a10.1002/advs.202103507Controlled Synthesis of Ultrathin PtSe2 Nanosheets with Thickness‐Tunable Electrical and Magnetoelectrical PropertiesHuifang Ma0Qi Qian1Biao Qin2Zhong Wan3Ruixia Wu4Bei Zhao5Hongmei Zhang6Zucheng Zhang7Jia Li8Zhengwei Zhang9Bo Li10Lin Wang11Xidong Duan12Hunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 ChinaDepartment of Chemistry and Biochemistry University of California Los Angeles California 90095 United StatesDepartment of Applied Physics School of Physics and Electronics Hunan University Changsha 410082 ChinaDepartment of Chemistry and Biochemistry University of California Los Angeles California 90095 United StatesHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 ChinaDepartment of Applied Physics School of Physics and Electronics Hunan University Changsha 410082 ChinaInstitute of Advanced Materials (IAM) Nanjing Tech University (NanjingTech) Nanjing 211800 ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 ChinaAbstract Thickness‐dependent chemical and physical properties have gained tremendous interest since the emergence of two‐dimensional (2D) materials. Despite attractive prospects, the thickness‐controlled synthesis of ultrathin nanosheets remains an outstanding challenge. Here, a chemical vapor deposition (CVD) route is reported to controllably synthesize high‐quality PtSe2 nanosheets with tunable thickness and explore their thickness‐dependent electronic and magnetotransport properties. Raman spectroscopic studies demonstrate all Eg, A1g, A2u, and Eu modes are red shift in thicker nanosheets. Electrical measurements demonstrate the 1.7 nm thick nanosheet is a semiconductor with room temperature field‐effect mobility of 66 cm2 V−1 s−1 and on/off ratio of 106. The 2.3–3.8 nm thick nanosheets show slightly gated modulation with high field‐effect mobility up to 324 cm2 V−1 s−1 at room‐temperature. When the thickness is over 3.8 nm, the nanosheets show metallic behavior with conductivity and breakdown current density up to 6.8 × 105 S m–1 and 6.9 × 107 A cm−2, respectively. Interestingly, magnetoresistance (MR) studies reveal magnetic orders exist in this intrinsically non‐magnetic material system, as manifested by the thickness‐dependent Kondo effect, where both metal to insulator transition and negative MR appear upon cooling. Together, these studies suggest that PtSe2 is an intriguing system for both developing novel functional electronics and conducting fundamental 2D magnetism study.https://doi.org/10.1002/advs.2021035072D materialscarrier mobilitychemical vapor depositionKondo effectnegative magnetoresistance |
| spellingShingle | Huifang Ma Qi Qian Biao Qin Zhong Wan Ruixia Wu Bei Zhao Hongmei Zhang Zucheng Zhang Jia Li Zhengwei Zhang Bo Li Lin Wang Xidong Duan Controlled Synthesis of Ultrathin PtSe2 Nanosheets with Thickness‐Tunable Electrical and Magnetoelectrical Properties Advanced Science 2D materials carrier mobility chemical vapor deposition Kondo effect negative magnetoresistance |
| title | Controlled Synthesis of Ultrathin PtSe2 Nanosheets with Thickness‐Tunable Electrical and Magnetoelectrical Properties |
| title_full | Controlled Synthesis of Ultrathin PtSe2 Nanosheets with Thickness‐Tunable Electrical and Magnetoelectrical Properties |
| title_fullStr | Controlled Synthesis of Ultrathin PtSe2 Nanosheets with Thickness‐Tunable Electrical and Magnetoelectrical Properties |
| title_full_unstemmed | Controlled Synthesis of Ultrathin PtSe2 Nanosheets with Thickness‐Tunable Electrical and Magnetoelectrical Properties |
| title_short | Controlled Synthesis of Ultrathin PtSe2 Nanosheets with Thickness‐Tunable Electrical and Magnetoelectrical Properties |
| title_sort | controlled synthesis of ultrathin ptse2 nanosheets with thickness tunable electrical and magnetoelectrical properties |
| topic | 2D materials carrier mobility chemical vapor deposition Kondo effect negative magnetoresistance |
| url | https://doi.org/10.1002/advs.202103507 |
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