Reliability of Miniaturized Transistors from the Perspective of Single-Defects
To analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a drift of the device threshold voltage over time...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-07-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/11/8/736 |
| _version_ | 1797560947804471296 |
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| author | Michael Waltl |
| author_facet | Michael Waltl |
| author_sort | Michael Waltl |
| collection | DOAJ |
| description | To analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a drift of the device threshold voltage over time. With ongoing miniaturization of the transistors towards a few tens of nanometer small devices the drift of the threshold voltage is observed to proceed in discrete steps. Quite interestingly, each of these steps correspond to charge capture or charge emission event of a certain defect in the atomic structure of the device. This observation paves the way for studying device reliability issues like BTI at the single-defect level. By considering single-defects the physical mechanism of charge trapping can be investigated very detailed. An in-depth understanding of the intricate charge trapping kinetics of the defects is essential for modeling of the device behavior and also for accurate estimation of the device lifetime amongst others. In this article the recent advancements in characterization, analysis and modeling of single-defects are reviewed. |
| first_indexed | 2024-03-10T18:07:37Z |
| format | Article |
| id | doaj.art-cda6c90f432246baadebe9606ab11dd2 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T18:07:37Z |
| publishDate | 2020-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-cda6c90f432246baadebe9606ab11dd22023-11-20T08:23:28ZengMDPI AGMicromachines2072-666X2020-07-0111873610.3390/mi11080736Reliability of Miniaturized Transistors from the Perspective of Single-DefectsMichael Waltl0Christian Doppler Laboratory for Single-Defect Spectroscopy (SDS) at the Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29/E360, 1040 Vienna, AustriaTo analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a drift of the device threshold voltage over time. With ongoing miniaturization of the transistors towards a few tens of nanometer small devices the drift of the threshold voltage is observed to proceed in discrete steps. Quite interestingly, each of these steps correspond to charge capture or charge emission event of a certain defect in the atomic structure of the device. This observation paves the way for studying device reliability issues like BTI at the single-defect level. By considering single-defects the physical mechanism of charge trapping can be investigated very detailed. An in-depth understanding of the intricate charge trapping kinetics of the defects is essential for modeling of the device behavior and also for accurate estimation of the device lifetime amongst others. In this article the recent advancements in characterization, analysis and modeling of single-defects are reviewed.https://www.mdpi.com/2072-666X/11/8/736device reliabilitynanoscale transistorbias temperature instabilities (BTI)defectssingle-defect spectroscopynon-radiative multiphonon (NMP) model |
| spellingShingle | Michael Waltl Reliability of Miniaturized Transistors from the Perspective of Single-Defects Micromachines device reliability nanoscale transistor bias temperature instabilities (BTI) defects single-defect spectroscopy non-radiative multiphonon (NMP) model |
| title | Reliability of Miniaturized Transistors from the Perspective of Single-Defects |
| title_full | Reliability of Miniaturized Transistors from the Perspective of Single-Defects |
| title_fullStr | Reliability of Miniaturized Transistors from the Perspective of Single-Defects |
| title_full_unstemmed | Reliability of Miniaturized Transistors from the Perspective of Single-Defects |
| title_short | Reliability of Miniaturized Transistors from the Perspective of Single-Defects |
| title_sort | reliability of miniaturized transistors from the perspective of single defects |
| topic | device reliability nanoscale transistor bias temperature instabilities (BTI) defects single-defect spectroscopy non-radiative multiphonon (NMP) model |
| url | https://www.mdpi.com/2072-666X/11/8/736 |
| work_keys_str_mv | AT michaelwaltl reliabilityofminiaturizedtransistorsfromtheperspectiveofsingledefects |