Reliability of Miniaturized Transistors from the Perspective of Single-Defects
To analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a drift of the device threshold voltage over time...
Main Author: | Michael Waltl |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-07-01
|
Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/11/8/736 |
Similar Items
-
A vacancy-interstitial defect pair model for positive-bias temperature stress-induced electron trapping transformation in the high-κ gate n-MOSFET
by: Gu, Chenjie, et al.
Published: (2018) -
Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction
by: Jian Fu Zhang, et al.
Published: (2022-04-01) -
Development and Challenges of Reliability Modeling From Transistors to Circuits
by: Xinhuan Yang, et al.
Published: (2023-01-01) -
Logical Resolving-Based Methodology for Efficient Reliability Analysis
by: Zhengguang Tang, et al.
Published: (2023-12-01) -
The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms
by: Zixuan Sun, et al.
Published: (2024-01-01)