Linker engineering of larger POSS-based ultra-low-k dielectrics toward outstanding comprehensive properties
Low-dielectric-constant (low-k) materials are an indispensable part of microprocessors as they can alleviate electronic crosstalk, charge build-up, and signal propagation delay. However, existing low-k materials usually have k values higher than 2 and inferior thermo-mechanical properties, which res...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-06-01
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| Series: | Giant |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666542523000085 |
| _version_ | 1797801733006557184 |
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| author | Dai-Lin Zhou Xing Wang Wei-Cheng Qu Qing-Yun Guo Chen-Yu Li Qin Zhang Di Han Qiang Fu |
| author_facet | Dai-Lin Zhou Xing Wang Wei-Cheng Qu Qing-Yun Guo Chen-Yu Li Qin Zhang Di Han Qiang Fu |
| author_sort | Dai-Lin Zhou |
| collection | DOAJ |
| description | Low-dielectric-constant (low-k) materials are an indispensable part of microprocessors as they can alleviate electronic crosstalk, charge build-up, and signal propagation delay. However, existing low-k materials usually have k values higher than 2 and inferior thermo-mechanical properties, which restrict the development of microelectronic devices. Although we have recently discovered that larger polyhedral oligomeric silsesquioxanes (POSS) are useful building blocks for fabricating advanced ultra-low-k materials, it remains to be seen whether a POSS cage and linker could be leveraged to tune the structure-property of the materials and create ultra-low-k materials with improved comprehensive properties. Herein, we propose a series of POSS-based hybrid materials (i.e., c-TnPBn and c-TnFn, n = 8, 10, and 12) that consist of distinct POSS cages and linkers. When the linker is kept identical, the gradual enlargement of the POSS cage enhances the porosity/free volume fraction of materials, resulting in quasi-linearly reduced k values for the resulting materials (k = 1.93 for c-T12PB12, 2.14 for c-T12F12). Meanwhile, the materials’ comprehensive properties can be significantly improved by increasing the POSS cage size or varying the linker’s length and type. As a result, ultra-low-k materials with good processability, low surface roughness (< 0.40 nm), excellent thermostability (> 480 °C), mechanical properties (elastic modulus > 2.5 GPa), and hydrophobicity have been obtained, and the low-k values can be maintained under high temperature (e.g., 300 °C) and wet condition. This work reveals the critical contribution of POSS cage size and linker to the structure and properties of POSS-based low-k materials and offers promising materials for the future of the microelectronic industry. |
| first_indexed | 2024-03-13T04:54:58Z |
| format | Article |
| id | doaj.art-cdd728ed72b94329b8b5b064e708646e |
| institution | Directory Open Access Journal |
| issn | 2666-5425 |
| language | English |
| last_indexed | 2024-03-13T04:54:58Z |
| publishDate | 2023-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Giant |
| spelling | doaj.art-cdd728ed72b94329b8b5b064e708646e2023-06-18T05:03:26ZengElsevierGiant2666-54252023-06-0114100146Linker engineering of larger POSS-based ultra-low-k dielectrics toward outstanding comprehensive propertiesDai-Lin Zhou0Xing Wang1Wei-Cheng Qu2Qing-Yun Guo3Chen-Yu Li4Qin Zhang5Di Han6Qiang Fu7College of Polymer Science & Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, ChinaCollege of Polymer Science & Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, ChinaCollege of Polymer Science & Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, ChinaDepartment of Chemistry, The University of Chicago, Chicago, IL 60637, United StatesCollege of Polymer Science & Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, ChinaCollege of Polymer Science & Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, ChinaCollege of Polymer Science & Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, China; Corresponding authors.College of Polymer Science & Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, China; Corresponding authors.Low-dielectric-constant (low-k) materials are an indispensable part of microprocessors as they can alleviate electronic crosstalk, charge build-up, and signal propagation delay. However, existing low-k materials usually have k values higher than 2 and inferior thermo-mechanical properties, which restrict the development of microelectronic devices. Although we have recently discovered that larger polyhedral oligomeric silsesquioxanes (POSS) are useful building blocks for fabricating advanced ultra-low-k materials, it remains to be seen whether a POSS cage and linker could be leveraged to tune the structure-property of the materials and create ultra-low-k materials with improved comprehensive properties. Herein, we propose a series of POSS-based hybrid materials (i.e., c-TnPBn and c-TnFn, n = 8, 10, and 12) that consist of distinct POSS cages and linkers. When the linker is kept identical, the gradual enlargement of the POSS cage enhances the porosity/free volume fraction of materials, resulting in quasi-linearly reduced k values for the resulting materials (k = 1.93 for c-T12PB12, 2.14 for c-T12F12). Meanwhile, the materials’ comprehensive properties can be significantly improved by increasing the POSS cage size or varying the linker’s length and type. As a result, ultra-low-k materials with good processability, low surface roughness (< 0.40 nm), excellent thermostability (> 480 °C), mechanical properties (elastic modulus > 2.5 GPa), and hydrophobicity have been obtained, and the low-k values can be maintained under high temperature (e.g., 300 °C) and wet condition. This work reveals the critical contribution of POSS cage size and linker to the structure and properties of POSS-based low-k materials and offers promising materials for the future of the microelectronic industry.http://www.sciencedirect.com/science/article/pii/S2666542523000085Low-k dielectricsPolyhedral oligomeric silsesquioxaneHybrid materialsFree volumeThermosets |
| spellingShingle | Dai-Lin Zhou Xing Wang Wei-Cheng Qu Qing-Yun Guo Chen-Yu Li Qin Zhang Di Han Qiang Fu Linker engineering of larger POSS-based ultra-low-k dielectrics toward outstanding comprehensive properties Giant Low-k dielectrics Polyhedral oligomeric silsesquioxane Hybrid materials Free volume Thermosets |
| title | Linker engineering of larger POSS-based ultra-low-k dielectrics toward outstanding comprehensive properties |
| title_full | Linker engineering of larger POSS-based ultra-low-k dielectrics toward outstanding comprehensive properties |
| title_fullStr | Linker engineering of larger POSS-based ultra-low-k dielectrics toward outstanding comprehensive properties |
| title_full_unstemmed | Linker engineering of larger POSS-based ultra-low-k dielectrics toward outstanding comprehensive properties |
| title_short | Linker engineering of larger POSS-based ultra-low-k dielectrics toward outstanding comprehensive properties |
| title_sort | linker engineering of larger poss based ultra low k dielectrics toward outstanding comprehensive properties |
| topic | Low-k dielectrics Polyhedral oligomeric silsesquioxane Hybrid materials Free volume Thermosets |
| url | http://www.sciencedirect.com/science/article/pii/S2666542523000085 |
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