The study of radiation damage of EPROM 2764 memory

A simple statistical theory of radiation damage of semiconductor memory has been constructed. The radiation damage of EPROM memory has been investigated. The measured number of damaged bytes is significantly lower than the expected number resulting from the purely random distribution of the...

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Main Authors: Domanski Grzegorz, Konarzewski Bogumil, Kurjata Robert, Marzec Janusz, Zaremba Krzysztof, Dziewiecki Michal, Ziembicki Marcin, Rychter Andrzej
Format: Article
Language:English
Published: VINCA Institute of Nuclear Sciences 2016-01-01
Series:Nuclear Technology and Radiation Protection
Subjects:
Online Access:http://www.doiserbia.nb.rs/img/doi/1451-3994/2016/1451-39941603233D.pdf
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author Domanski Grzegorz
Konarzewski Bogumil
Kurjata Robert
Marzec Janusz
Zaremba Krzysztof
Dziewiecki Michal
Ziembicki Marcin
Rychter Andrzej
author_facet Domanski Grzegorz
Konarzewski Bogumil
Kurjata Robert
Marzec Janusz
Zaremba Krzysztof
Dziewiecki Michal
Ziembicki Marcin
Rychter Andrzej
author_sort Domanski Grzegorz
collection DOAJ
description A simple statistical theory of radiation damage of semiconductor memory has been constructed. The radiation damage of EPROM memory has been investigated. The measured number of damaged bytes is significantly lower than the expected number resulting from the purely random distribution of the damaged bits. In this way it has been proven that there is a correlation between the failures of individual memory bits which are located in the same byte.
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spelling doaj.art-ce04fcbae0fe4716b16203d26b650e672022-12-21T18:59:34ZengVINCA Institute of Nuclear SciencesNuclear Technology and Radiation Protection1451-39941452-81852016-01-0131323323910.2298/NTRP1603233D1451-39941603233DThe study of radiation damage of EPROM 2764 memoryDomanski Grzegorz0Konarzewski Bogumil1Kurjata Robert2Marzec Janusz3Zaremba Krzysztof4Dziewiecki Michal5Ziembicki Marcin6Rychter Andrzej7Warsaw University of Technology, Institute of Radioelectronics and Multimedia Technology, Warsaw, PolandWarsaw University of Technology, Institute of Radioelectronics and Multimedia Technology, Warsaw, PolandWarsaw University of Technology, Institute of Radioelectronics and Multimedia Technology, Warsaw, PolandWarsaw University of Technology, Institute of Radioelectronics and Multimedia Technology, Warsaw, PolandWarsaw University of Technology, Institute of Radioelectronics and Multimedia Technology, Warsaw, PolandWarsaw University of Technology, Institute of Radioelectronics and Multimedia Technology, Warsaw, PolandWarsaw University of Technology, Institute of Radioelectronics and Multimedia Technology, Warsaw, PolandWarsaw University of Technology, Institute of Radioelectronics and Multimedia Technology, Warsaw, PolandA simple statistical theory of radiation damage of semiconductor memory has been constructed. The radiation damage of EPROM memory has been investigated. The measured number of damaged bytes is significantly lower than the expected number resulting from the purely random distribution of the damaged bits. In this way it has been proven that there is a correlation between the failures of individual memory bits which are located in the same byte.http://www.doiserbia.nb.rs/img/doi/1451-3994/2016/1451-39941603233D.pdfradiation damageEPROMnon-volatile memory
spellingShingle Domanski Grzegorz
Konarzewski Bogumil
Kurjata Robert
Marzec Janusz
Zaremba Krzysztof
Dziewiecki Michal
Ziembicki Marcin
Rychter Andrzej
The study of radiation damage of EPROM 2764 memory
Nuclear Technology and Radiation Protection
radiation damage
EPROM
non-volatile memory
title The study of radiation damage of EPROM 2764 memory
title_full The study of radiation damage of EPROM 2764 memory
title_fullStr The study of radiation damage of EPROM 2764 memory
title_full_unstemmed The study of radiation damage of EPROM 2764 memory
title_short The study of radiation damage of EPROM 2764 memory
title_sort study of radiation damage of eprom 2764 memory
topic radiation damage
EPROM
non-volatile memory
url http://www.doiserbia.nb.rs/img/doi/1451-3994/2016/1451-39941603233D.pdf
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