All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect
The combination of the integrated waveguide and phase-change materials (PCMs) provides a promising platform for reconfigurable and multifunctional photoelectric devices. Through plasmonic enhancement and the low loss propagation of the waveguide, the footprint and power consumption of the photoelect...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-02-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/9/3/132 |
| _version_ | 1797443521085440000 |
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| author | Wei Sun Yegang Lu Libo Miao Yu Zhang |
| author_facet | Wei Sun Yegang Lu Libo Miao Yu Zhang |
| author_sort | Wei Sun |
| collection | DOAJ |
| description | The combination of the integrated waveguide and phase-change materials (PCMs) provides a promising platform for reconfigurable and multifunctional photoelectric devices. Through plasmonic enhancement and the low loss propagation of the waveguide, the footprint and power consumption of the photoelectric device can be effectively improved. In this work, a metal double-ring structure embedded with phase change materials was proposed to utilize the plasmonic effect for enhancement of the light-matter interaction. In particular, the overall temperature difference in the PCM cell can be confined within 2 °C during the crystallization process, thus avoiding the interior heterogeneous crystallization. The insertion loss of the cell in amorphous and crystalline states at a wavelength of 1550 nm are 2.3 dB and 1.0 dB, respectively. A signal contrast ratio of 15.8% is achieved under the ultra-small footprint (50 × 90 nm<sup>2</sup>) at a wavelength of 1550 nm. |
| first_indexed | 2024-03-09T12:57:16Z |
| format | Article |
| id | doaj.art-ce254aa948c94ed5a662f9c2b6eed30a |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-09T12:57:16Z |
| publishDate | 2022-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-ce254aa948c94ed5a662f9c2b6eed30a2023-11-30T21:58:38ZengMDPI AGPhotonics2304-67322022-02-019313210.3390/photonics9030132All-Optical Phase-Change Memory with Improved Performance by Plasmonic EffectWei Sun0Yegang Lu1Libo Miao2Yu Zhang3Faculty of Electrical Engineering and Computer Science, Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo University, Ningbo 315211, ChinaThe combination of the integrated waveguide and phase-change materials (PCMs) provides a promising platform for reconfigurable and multifunctional photoelectric devices. Through plasmonic enhancement and the low loss propagation of the waveguide, the footprint and power consumption of the photoelectric device can be effectively improved. In this work, a metal double-ring structure embedded with phase change materials was proposed to utilize the plasmonic effect for enhancement of the light-matter interaction. In particular, the overall temperature difference in the PCM cell can be confined within 2 °C during the crystallization process, thus avoiding the interior heterogeneous crystallization. The insertion loss of the cell in amorphous and crystalline states at a wavelength of 1550 nm are 2.3 dB and 1.0 dB, respectively. A signal contrast ratio of 15.8% is achieved under the ultra-small footprint (50 × 90 nm<sup>2</sup>) at a wavelength of 1550 nm.https://www.mdpi.com/2304-6732/9/3/132phase change memoryplasmonsswitching speedpower consumption |
| spellingShingle | Wei Sun Yegang Lu Libo Miao Yu Zhang All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect Photonics phase change memory plasmons switching speed power consumption |
| title | All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect |
| title_full | All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect |
| title_fullStr | All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect |
| title_full_unstemmed | All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect |
| title_short | All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect |
| title_sort | all optical phase change memory with improved performance by plasmonic effect |
| topic | phase change memory plasmons switching speed power consumption |
| url | https://www.mdpi.com/2304-6732/9/3/132 |
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