Quasiepitaxial Aluminum Film Nanostructure Optimization for Superconducting Quantum Electronic Devices

Quasiepitaxial Aluminum Film Nanostructure Optimization for Superconducting Quantum Electronic Devices

In this paper, we develop fabrication technology and study aluminum films intended for superconducting quantum nanoelectronics using AFM, SEM, XRD, HRXRR. Two-temperature-step quasiepitaxial growth of Al on (111) Si substrate provides a preferentially (111)-oriented Al polycrystalline film and reduc...

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Bibliographic Details
Main Authors: Mikhail Tarasov, Andrey Lomov, Artem Chekushkin, Mikhail Fominsky, Denis Zakharov, Andrey Tatarintsev, Sergey Kraevsky, Anton Shadrin
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Nanomaterials
Subjects:
nanoelectronics
Josephson junctions
nanodevices
crystal structure
epitaxial films
surface roughness
Online Access:https://www.mdpi.com/2079-4991/13/13/2002

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