Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures
The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions...
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| author | Aleksey N. Klochkov Almas Yskakov Aleksander N. Vinichenko Danil A. Safonov Nikolay I. Kargin Maksim V. Bulavin Aleksey V. Galushko Vladik R. Yamurzin Ivan S. Vasil’evskii |
| author_facet | Aleksey N. Klochkov Almas Yskakov Aleksander N. Vinichenko Danil A. Safonov Nikolay I. Kargin Maksim V. Bulavin Aleksey V. Galushko Vladik R. Yamurzin Ivan S. Vasil’evskii |
| author_sort | Aleksey N. Klochkov |
| collection | DOAJ |
| description | The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 × 10<sup>14</sup> cm<sup>−2</sup> ÷ 1.2 × 10<sup>16</sup> cm<sup>−2</sup>. The low-temperature photoluminescence spectra, electron concentration and mobility, and high-resolution X-ray diffraction curves were measured after the deactivation. The paper discusses the effect of neutron dose on the conductivity and optical spectra of structures based on InGaAs quantum wells depending on the doping level. The limiting dose of neutron irradiation was also estimated for the successful utilization of AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs heterostructures in electronic applications. |
| first_indexed | 2024-03-10T21:06:18Z |
| format | Article |
| id | doaj.art-ce8c5a9d4b2e456c8b97a00ff5dbee7f |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T21:06:18Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-ce8c5a9d4b2e456c8b97a00ff5dbee7f2023-11-19T17:11:47ZengMDPI AGMaterials1996-19442023-10-011620675010.3390/ma16206750Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well StructuresAleksey N. Klochkov0Almas Yskakov1Aleksander N. Vinichenko2Danil A. Safonov3Nikolay I. Kargin4Maksim V. Bulavin5Aleksey V. Galushko6Vladik R. Yamurzin7Ivan S. Vasil’evskii8MEPhI Institute of Nanoengineering in Electronics, Spintronics and Photonics, Moscow 115409, RussiaJoint Institute for Nuclear Research, Dubna 141980, RussiaMEPhI Institute of Nanoengineering in Electronics, Spintronics and Photonics, Moscow 115409, RussiaMEPhI Institute of Nanoengineering in Electronics, Spintronics and Photonics, Moscow 115409, RussiaMEPhI Institute of Nanoengineering in Electronics, Spintronics and Photonics, Moscow 115409, RussiaJoint Institute for Nuclear Research, Dubna 141980, RussiaJoint Institute for Nuclear Research, Dubna 141980, RussiaJoint Institute for Nuclear Research, Dubna 141980, RussiaMEPhI Institute of Nanoengineering in Electronics, Spintronics and Photonics, Moscow 115409, RussiaThe effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 × 10<sup>14</sup> cm<sup>−2</sup> ÷ 1.2 × 10<sup>16</sup> cm<sup>−2</sup>. The low-temperature photoluminescence spectra, electron concentration and mobility, and high-resolution X-ray diffraction curves were measured after the deactivation. The paper discusses the effect of neutron dose on the conductivity and optical spectra of structures based on InGaAs quantum wells depending on the doping level. The limiting dose of neutron irradiation was also estimated for the successful utilization of AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs heterostructures in electronic applications.https://www.mdpi.com/1996-1944/16/20/6750InGaAstwo-dimensional electron gasneutron irradiationphotoluminescenceelectron concentrationmobility |
| spellingShingle | Aleksey N. Klochkov Almas Yskakov Aleksander N. Vinichenko Danil A. Safonov Nikolay I. Kargin Maksim V. Bulavin Aleksey V. Galushko Vladik R. Yamurzin Ivan S. Vasil’evskii Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures Materials InGaAs two-dimensional electron gas neutron irradiation photoluminescence electron concentration mobility |
| title | Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures |
| title_full | Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures |
| title_fullStr | Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures |
| title_full_unstemmed | Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures |
| title_short | Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures |
| title_sort | effect of neutron irradiation on the electronic and optical properties of algaas ingaas based quantum well structures |
| topic | InGaAs two-dimensional electron gas neutron irradiation photoluminescence electron concentration mobility |
| url | https://www.mdpi.com/1996-1944/16/20/6750 |
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