A SPIN POLARIZATION INVERSION OF ULTRA-SHORT SINGLE-WALLED CARBON NANOTUBES (0, 9) IN A STRONG ELECTRIC FIELD
Results of the numerical simulation of the electronic structure of ultra–short single-walled carbon nanotubes (0, 9) of D3h,D3d and D d 3 symmetries at singlet and triplet spin states under an applied electric eld were presented. The dependencies of the energy gap, ionization potential, electron af...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Voronezh State University
2017-03-01
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Series: | Конденсированные среды и межфазные границы |
Subjects: |
Summary: | Results of the numerical simulation of the electronic structure of ultra–short single-walled carbon nanotubes (0, 9) of D3h,D3d and D d 3 symmetries at singlet and triplet spin states under an applied electric eld were presented. The dependencies of the energy gap, ionization potential, electron af nity and work function on the length of nanotubes at the singlet and triplet spin state were described. It was revealed, that the spin-dependent eld-induced electronic structure restructuring determines the change of the spin channel resistance. The critical electric eld value ~0.5 V/A inverts spin polarization
The carbon nanotubes can act as spin lter and can be used for spintronic logic gates design, that makes nanotubes promising material for spintronic implementation. |
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ISSN: | 1606-867X 1606-867X |