In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides
Using in situ reflection electron microscopy we have presented latest studies of Si(111) and Bi2Se3(0001) surface processes during sublimation, homo- and heteroepitaxial growth of layered metal chalcogenides. A structural kinetic diagram of interaction between a selenium molecular beam and Si(111) s...
| Үндсэн зохиолчид: | , , , , , , , , , |
|---|---|
| Формат: | Өгүүллэг |
| Хэл сонгох: | English |
| Хэвлэсэн: |
Pensoft Publishers
2024-12-01
|
| Цуврал: | Modern Electronic Materials |
| Онлайн хандалт: | https://moem.pensoft.net/article/144317/download/pdf/ |