Characterization of nanostructure ferrite material on gallium nitride on SiC substrate for millimeter wave integrated circuit
In this paper, for the first time, the characterization of spin-casted thick Barium nano-hexaferrite film on GaN-on-SiC substrate over a broad frequency range of 30-110 GHz is presented. Real and imaginary parts of both permittivity and permeability of the ferrite/polymer film are computed from tran...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2017-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4977231 |
| _version_ | 1818846832368812032 |
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| author | Brian O’Keefe Tinghao Liang Mohammad N. Afsar Valencia J. Koomson |
| author_facet | Brian O’Keefe Tinghao Liang Mohammad N. Afsar Valencia J. Koomson |
| author_sort | Brian O’Keefe |
| collection | DOAJ |
| description | In this paper, for the first time, the characterization of spin-casted thick Barium nano-hexaferrite film on GaN-on-SiC substrate over a broad frequency range of 30-110 GHz is presented. Real and imaginary parts of both permittivity and permeability of the ferrite/polymer film are computed from transmittance data obtained by using a free space quasi-optical millimeter wave spectrometer. The spin-casted composite film shows strong resonance in the Q band, and mixing the powder with polymer slightly shifts the resonance frequency lower compared to pure powder. The high temperature compatibility of GaN substrate enables us to run burn-out tests at temperatures up to 900°C. Significant shortening phenomenon of resonance linewidth after heat treatment was found. Linewidth is reduced from 2.8 kOe to 1.7 kOe. Experiment results show that the aforementioned film is a good candidate in applications of non-reciprocal ferrite devices like isolators, phase shifters, and circulators. |
| first_indexed | 2024-12-19T05:51:49Z |
| format | Article |
| id | doaj.art-ceb57dfc2db84ab198535b9aa3487725 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-19T05:51:49Z |
| publishDate | 2017-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-ceb57dfc2db84ab198535b9aa34877252022-12-21T20:33:35ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175056427056427-610.1063/1.4977231268791ADVCharacterization of nanostructure ferrite material on gallium nitride on SiC substrate for millimeter wave integrated circuitBrian O’Keefe0Tinghao Liang1Mohammad N. Afsar2Valencia J. Koomson3Department of Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155, USADepartment of Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155, USADepartment of Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155, USADepartment of Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155, USAIn this paper, for the first time, the characterization of spin-casted thick Barium nano-hexaferrite film on GaN-on-SiC substrate over a broad frequency range of 30-110 GHz is presented. Real and imaginary parts of both permittivity and permeability of the ferrite/polymer film are computed from transmittance data obtained by using a free space quasi-optical millimeter wave spectrometer. The spin-casted composite film shows strong resonance in the Q band, and mixing the powder with polymer slightly shifts the resonance frequency lower compared to pure powder. The high temperature compatibility of GaN substrate enables us to run burn-out tests at temperatures up to 900°C. Significant shortening phenomenon of resonance linewidth after heat treatment was found. Linewidth is reduced from 2.8 kOe to 1.7 kOe. Experiment results show that the aforementioned film is a good candidate in applications of non-reciprocal ferrite devices like isolators, phase shifters, and circulators.http://dx.doi.org/10.1063/1.4977231 |
| spellingShingle | Brian O’Keefe Tinghao Liang Mohammad N. Afsar Valencia J. Koomson Characterization of nanostructure ferrite material on gallium nitride on SiC substrate for millimeter wave integrated circuit AIP Advances |
| title | Characterization of nanostructure ferrite material on gallium nitride on SiC substrate for millimeter wave integrated circuit |
| title_full | Characterization of nanostructure ferrite material on gallium nitride on SiC substrate for millimeter wave integrated circuit |
| title_fullStr | Characterization of nanostructure ferrite material on gallium nitride on SiC substrate for millimeter wave integrated circuit |
| title_full_unstemmed | Characterization of nanostructure ferrite material on gallium nitride on SiC substrate for millimeter wave integrated circuit |
| title_short | Characterization of nanostructure ferrite material on gallium nitride on SiC substrate for millimeter wave integrated circuit |
| title_sort | characterization of nanostructure ferrite material on gallium nitride on sic substrate for millimeter wave integrated circuit |
| url | http://dx.doi.org/10.1063/1.4977231 |
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