Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement

Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement

The sacrificed-QD-layer method can well control the indium deposition amount to grow InAs quantum dots (QDs) with isotropic geometry. Individual Si dopant above an (001)-based InAs QD proves a new method to build a local electric field to reduce fine structure splitting (FSS = X1−X2) and show D<s...

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Bibliographic Details
Main Authors: Xiangjun Shang, Shulun Li, Hanqing Liu, Ben Ma, Xiangbin Su, Yao Chen, Jiaxin Shen, Huiming Hao, Bing Liu, Xiuming Dou, Yang Ji, Baoquan Sun, Haiqiao Ni, Zhichuan Niu
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Crystals
Subjects:
single quantum dot
cascade exciton emission
fine structure splitting
local electric field
polarization correlation
emission intensity polarization
Online Access:https://www.mdpi.com/2073-4352/11/10/1194

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