Improved Leakage Behavior at High Temperature via Engineering of Ferroelectric Sandwich Structures
The leakage behavior of ferroelectric film has an important effect on energy storage characteristics. Understanding and controlling the leakage mechanism of ferroelectric film at different temperatures can effectively improve its wide-temperature storage performance. Here, the structures of a 1 mol%...
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MDPI AG
2023-01-01
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| Online Access: | https://www.mdpi.com/1996-1944/16/2/712 |
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| author | Guangliang Hu Yinchang Shen Qiaolan Fan Wanli Zhao Tongyu Liu Chunrui Ma Chun-Lin Jia Ming Liu |
| author_facet | Guangliang Hu Yinchang Shen Qiaolan Fan Wanli Zhao Tongyu Liu Chunrui Ma Chun-Lin Jia Ming Liu |
| author_sort | Guangliang Hu |
| collection | DOAJ |
| description | The leakage behavior of ferroelectric film has an important effect on energy storage characteristics. Understanding and controlling the leakage mechanism of ferroelectric film at different temperatures can effectively improve its wide-temperature storage performance. Here, the structures of a 1 mol% SiO<sub>2</sub>-doped BaZr<sub>0.35</sub>Ti<sub>0.65</sub>O<sub>3</sub> (BZTS) layer sandwiched between two undoped BaZr<sub>0.35</sub>Ti<sub>0.65</sub>O<sub>3</sub> (BZT35) layers was demonstrated, and the leakage mechanism was analyzed compared with BZT35 and BZTS single-layer film. It was found that interface-limited conduction of Schottky (S) emission and the Fowler-Nordheim (F-N) tunneling existing in BZT35 and BZTS films under high temperature and a high electric field are the main source of the increase of leakage current and the decrease of energy storage efficiency at high temperature. Only an ohmic conductive mechanism exists in the whole temperature range of BZT35/BZTS/BZT35(1:1:1) sandwich structure films, indicating that sandwich multilayer films can effectively simulate the occurrence of interface-limited conductive mechanisms and mention the energy storage characteristics under high temperature. |
| first_indexed | 2024-03-09T11:49:49Z |
| format | Article |
| id | doaj.art-ceffdfb279204da880301fae2fbc6862 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T11:49:49Z |
| publishDate | 2023-01-01 |
| publisher | MDPI AG |
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| series | Materials |
| spelling | doaj.art-ceffdfb279204da880301fae2fbc68622023-11-30T23:17:07ZengMDPI AGMaterials1996-19442023-01-0116271210.3390/ma16020712Improved Leakage Behavior at High Temperature via Engineering of Ferroelectric Sandwich StructuresGuangliang Hu0Yinchang Shen1Qiaolan Fan2Wanli Zhao3Tongyu Liu4Chunrui Ma5Chun-Lin Jia6Ming Liu7School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, ChinaSchool of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, ChinaSchool of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, ChinaScience and Technology on Electro-Optical Information Security Control Laboratory, Tianjin 300308, ChinaScience and Technology on Electro-Optical Information Security Control Laboratory, Tianjin 300308, ChinaState Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, ChinaSchool of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, ChinaSchool of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, ChinaThe leakage behavior of ferroelectric film has an important effect on energy storage characteristics. Understanding and controlling the leakage mechanism of ferroelectric film at different temperatures can effectively improve its wide-temperature storage performance. Here, the structures of a 1 mol% SiO<sub>2</sub>-doped BaZr<sub>0.35</sub>Ti<sub>0.65</sub>O<sub>3</sub> (BZTS) layer sandwiched between two undoped BaZr<sub>0.35</sub>Ti<sub>0.65</sub>O<sub>3</sub> (BZT35) layers was demonstrated, and the leakage mechanism was analyzed compared with BZT35 and BZTS single-layer film. It was found that interface-limited conduction of Schottky (S) emission and the Fowler-Nordheim (F-N) tunneling existing in BZT35 and BZTS films under high temperature and a high electric field are the main source of the increase of leakage current and the decrease of energy storage efficiency at high temperature. Only an ohmic conductive mechanism exists in the whole temperature range of BZT35/BZTS/BZT35(1:1:1) sandwich structure films, indicating that sandwich multilayer films can effectively simulate the occurrence of interface-limited conductive mechanisms and mention the energy storage characteristics under high temperature.https://www.mdpi.com/1996-1944/16/2/712multilayer structureferroelectricsenergy storage and conversionelectrical properties |
| spellingShingle | Guangliang Hu Yinchang Shen Qiaolan Fan Wanli Zhao Tongyu Liu Chunrui Ma Chun-Lin Jia Ming Liu Improved Leakage Behavior at High Temperature via Engineering of Ferroelectric Sandwich Structures Materials multilayer structure ferroelectrics energy storage and conversion electrical properties |
| title | Improved Leakage Behavior at High Temperature via Engineering of Ferroelectric Sandwich Structures |
| title_full | Improved Leakage Behavior at High Temperature via Engineering of Ferroelectric Sandwich Structures |
| title_fullStr | Improved Leakage Behavior at High Temperature via Engineering of Ferroelectric Sandwich Structures |
| title_full_unstemmed | Improved Leakage Behavior at High Temperature via Engineering of Ferroelectric Sandwich Structures |
| title_short | Improved Leakage Behavior at High Temperature via Engineering of Ferroelectric Sandwich Structures |
| title_sort | improved leakage behavior at high temperature via engineering of ferroelectric sandwich structures |
| topic | multilayer structure ferroelectrics energy storage and conversion electrical properties |
| url | https://www.mdpi.com/1996-1944/16/2/712 |
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