Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide
Abstract We present a new method for thin-film synthesis of the superconducting A15 phase of vanadium silicide with critical temperature higher than 13 K. Interdiffusion between a metallic vanadium film and the underlying silicon device layer in a silicon-on-insulator substrate, at temperatures betw...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2021-01-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-021-82046-1 |
| _version_ | 1818749686135128064 |
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| author | Wenrui Zhang Anthony T. Bollinger Ruoshui Li Kim Kisslinger Xiao Tong Mingzhao Liu Charles T. Black |
| author_facet | Wenrui Zhang Anthony T. Bollinger Ruoshui Li Kim Kisslinger Xiao Tong Mingzhao Liu Charles T. Black |
| author_sort | Wenrui Zhang |
| collection | DOAJ |
| description | Abstract We present a new method for thin-film synthesis of the superconducting A15 phase of vanadium silicide with critical temperature higher than 13 K. Interdiffusion between a metallic vanadium film and the underlying silicon device layer in a silicon-on-insulator substrate, at temperatures between 650 and 750 °C, favors formation of the vanadium-rich A15 phase by limiting the supply of available silicon for the reaction. Energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction verify the stoichiometry and structure of the synthesized thin films. We measure superconducting critical currents of more than 106 amperes per square centimeter at low temperature in micron-scale bars fabricated from the material, and an upper critical magnetic field of 20 T, from which we deduce a superconducting coherence length of 4 nm, consistent with previously reported bulk values. The relatively high critical temperature of A15 vanadium silicide is an appealing property for use in silicon-compatible quantum devices and circuits. |
| first_indexed | 2024-12-18T04:07:43Z |
| format | Article |
| id | doaj.art-cf0fa9ced23a4eb8bf55cf77ce5da8b9 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-18T04:07:43Z |
| publishDate | 2021-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-cf0fa9ced23a4eb8bf55cf77ce5da8b92022-12-21T21:21:33ZengNature PortfolioScientific Reports2045-23222021-01-011111710.1038/s41598-021-82046-1Thin-film synthesis of superconductor-on-insulator A15 vanadium silicideWenrui Zhang0Anthony T. Bollinger1Ruoshui Li2Kim Kisslinger3Xiao Tong4Mingzhao Liu5Charles T. Black6Center for Functional Nanomaterials, Brookhaven National LaboratoryCondensed Matter Physics and Materials Science Division, Brookhaven National LaboratoryCenter for Functional Nanomaterials, Brookhaven National LaboratoryCenter for Functional Nanomaterials, Brookhaven National LaboratoryCenter for Functional Nanomaterials, Brookhaven National LaboratoryCenter for Functional Nanomaterials, Brookhaven National LaboratoryCenter for Functional Nanomaterials, Brookhaven National LaboratoryAbstract We present a new method for thin-film synthesis of the superconducting A15 phase of vanadium silicide with critical temperature higher than 13 K. Interdiffusion between a metallic vanadium film and the underlying silicon device layer in a silicon-on-insulator substrate, at temperatures between 650 and 750 °C, favors formation of the vanadium-rich A15 phase by limiting the supply of available silicon for the reaction. Energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction verify the stoichiometry and structure of the synthesized thin films. We measure superconducting critical currents of more than 106 amperes per square centimeter at low temperature in micron-scale bars fabricated from the material, and an upper critical magnetic field of 20 T, from which we deduce a superconducting coherence length of 4 nm, consistent with previously reported bulk values. The relatively high critical temperature of A15 vanadium silicide is an appealing property for use in silicon-compatible quantum devices and circuits.https://doi.org/10.1038/s41598-021-82046-1 |
| spellingShingle | Wenrui Zhang Anthony T. Bollinger Ruoshui Li Kim Kisslinger Xiao Tong Mingzhao Liu Charles T. Black Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide Scientific Reports |
| title | Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide |
| title_full | Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide |
| title_fullStr | Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide |
| title_full_unstemmed | Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide |
| title_short | Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide |
| title_sort | thin film synthesis of superconductor on insulator a15 vanadium silicide |
| url | https://doi.org/10.1038/s41598-021-82046-1 |
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