Design and Analysis of a 28GHz 9KV ESD-Protected Distributed Travelling-Wave TRx Switch in 22nm FDSOI
This paper presents design and analysis of a 28GHz broadband single-pole double-throw (SPDT) distributed travelling-wave radio-frequency (RF) switch designed in a foundry 22nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The 28GHz SPDT transmitter-receiver (TRx) switch covers the n25...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9006883/ |
| _version_ | 1818877240440520704 |
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| author | Feilong Zhang Cheng Li Mengfu Di Zijin Pan Chaojiang Li Ned Cahoon Albert Wang |
| author_facet | Feilong Zhang Cheng Li Mengfu Di Zijin Pan Chaojiang Li Ned Cahoon Albert Wang |
| author_sort | Feilong Zhang |
| collection | DOAJ |
| description | This paper presents design and analysis of a 28GHz broadband single-pole double-throw (SPDT) distributed travelling-wave radio-frequency (RF) switch designed in a foundry 22nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The 28GHz SPDT transmitter-receiver (TRx) switch covers the n257 and n258 bands of the fifth-generation (5G) mobile wireless systems. Measurements show compatible switch performance to similar millimeter-wave (mm-wave) RF switches of various topologies designed in compound semiconductor high-electron-mobility transistor (HEMT) and Si bulk CMOS technologies. The SPDT switches achieve the highest reported 9KV ESD protection in measurements. It reveals that the ESD-induced parasitic effects have substantial impacts on mm-wave broadband RF switches. Careful ESD-RFIC co-design is suggested for designing 5G RF switches in above-6GHz bands. |
| first_indexed | 2024-12-19T13:55:08Z |
| format | Article |
| id | doaj.art-cf13c8f8063b4753a13266c6c640c481 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-19T13:55:08Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-cf13c8f8063b4753a13266c6c640c4812022-12-21T20:18:37ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01865566110.1109/JEDS.2020.29755989006883Design and Analysis of a 28GHz 9KV ESD-Protected Distributed Travelling-Wave TRx Switch in 22nm FDSOIFeilong Zhang0https://orcid.org/0000-0002-7014-9447Cheng Li1Mengfu Di2Zijin Pan3Chaojiang Li4Ned Cahoon5Albert Wang6https://orcid.org/0000-0002-0581-5765Department of Electrical and Computer Engineering, University of California at Riverside, Riverside, CA, USADepartment of Electrical and Computer Engineering, University of California at Riverside, Riverside, CA, USADepartment of Electrical and Computer Engineering, University of California at Riverside, Riverside, CA, USADepartment of Electrical and Computer Engineering, University of California at Riverside, Riverside, CA, USAGlobalFoundries, Essex Junction, VT, USAGlobalFoundries, Essex Junction, VT, USADepartment of Electrical and Computer Engineering, University of California at Riverside, Riverside, CA, USAThis paper presents design and analysis of a 28GHz broadband single-pole double-throw (SPDT) distributed travelling-wave radio-frequency (RF) switch designed in a foundry 22nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The 28GHz SPDT transmitter-receiver (TRx) switch covers the n257 and n258 bands of the fifth-generation (5G) mobile wireless systems. Measurements show compatible switch performance to similar millimeter-wave (mm-wave) RF switches of various topologies designed in compound semiconductor high-electron-mobility transistor (HEMT) and Si bulk CMOS technologies. The SPDT switches achieve the highest reported 9KV ESD protection in measurements. It reveals that the ESD-induced parasitic effects have substantial impacts on mm-wave broadband RF switches. Careful ESD-RFIC co-design is suggested for designing 5G RF switches in above-6GHz bands.https://ieeexplore.ieee.org/document/9006883/5GTRxswitchSOIESDtravelling wave |
| spellingShingle | Feilong Zhang Cheng Li Mengfu Di Zijin Pan Chaojiang Li Ned Cahoon Albert Wang Design and Analysis of a 28GHz 9KV ESD-Protected Distributed Travelling-Wave TRx Switch in 22nm FDSOI IEEE Journal of the Electron Devices Society 5G TRx switch SOI ESD travelling wave |
| title | Design and Analysis of a 28GHz 9KV ESD-Protected Distributed Travelling-Wave TRx Switch in 22nm FDSOI |
| title_full | Design and Analysis of a 28GHz 9KV ESD-Protected Distributed Travelling-Wave TRx Switch in 22nm FDSOI |
| title_fullStr | Design and Analysis of a 28GHz 9KV ESD-Protected Distributed Travelling-Wave TRx Switch in 22nm FDSOI |
| title_full_unstemmed | Design and Analysis of a 28GHz 9KV ESD-Protected Distributed Travelling-Wave TRx Switch in 22nm FDSOI |
| title_short | Design and Analysis of a 28GHz 9KV ESD-Protected Distributed Travelling-Wave TRx Switch in 22nm FDSOI |
| title_sort | design and analysis of a 28ghz 9kv esd protected distributed travelling wave trx switch in 22nm fdsoi |
| topic | 5G TRx switch SOI ESD travelling wave |
| url | https://ieeexplore.ieee.org/document/9006883/ |
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