Simple modelling of S‐type NbOx locally active memristor
Abstract Nanoscale S‐type NbOx locally active memristors (LAMs) open up new opportunities in the brain‐inspired neuromorphic computing. Simple yet accurate models for these memristors can provide benefits for designing related circuits and systems. Considering that the DC voltage–current plot of the...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-08-01
|
| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/ell2.12207 |
| Summary: | Abstract Nanoscale S‐type NbOx locally active memristors (LAMs) open up new opportunities in the brain‐inspired neuromorphic computing. Simple yet accurate models for these memristors can provide benefits for designing related circuits and systems. Considering that the DC voltage–current plot of the NbOx LAM under current sweeping is composed of three regions, that is, high resistance region, negative differential resistance region, and low resistance region, a three‐segment piecewise‐linear method is applied to fit these three regions. Based on this developed relation of the voltage and current at DC, a simple model for the NbOx LAM is proposed. The parameters of the proposed model can be easily identified in terms of the quasi‐static and dynamic electrical characteristics. A series of numerical simulations corroborate that the proposed model can accurately emulate the quasi‐static voltage–current characteristics and oscillating behaviours of the NbOx LAM. |
|---|---|
| ISSN: | 0013-5194 1350-911X |