Simple modelling of S‐type NbOx locally active memristor

Simple modelling of S‐type NbOx locally active memristor

Abstract Nanoscale S‐type NbOx locally active memristors (LAMs) open up new opportunities in the brain‐inspired neuromorphic computing. Simple yet accurate models for these memristors can provide benefits for designing related circuits and systems. Considering that the DC voltage–current plot of the...

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Bibliographic Details
Main Authors:	Yan Liang, Guangyi Wang, Chenyang Xia, Zhenzhou Lu
Format:	Article
Language:	English
Published:	Wiley 2021-08-01
Series:	Electronics Letters
Subjects:	Digital circuit design, modelling and testing Neural nets (circuit implementations) Neural net devices Resistors
Online Access:	https://doi.org/10.1049/ell2.12207

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