Enhanced Synaptic Behaviors in Chitosan Electrolyte-Based Electric-Double-Layer Transistors with Poly-Si Nanowire Channel Structures
In this study, we enhance the synaptic behavior of artificial synaptic transistors by utilizing nanowire (NW)-type polysilicon channel structures. The high surface-to-volume ratio of the NW channels enables efficient modulation of the channel conductance, which is interpreted as the synaptic weight....
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-09-01
|
| Series: | Biomimetics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2313-7673/8/5/432 |
| _version_ | 1797581125550342144 |
|---|---|
| author | Dong-Hee Lee Hwi-Su Kim Ki-Woong Park Hamin Park Won-Ju Cho |
| author_facet | Dong-Hee Lee Hwi-Su Kim Ki-Woong Park Hamin Park Won-Ju Cho |
| author_sort | Dong-Hee Lee |
| collection | DOAJ |
| description | In this study, we enhance the synaptic behavior of artificial synaptic transistors by utilizing nanowire (NW)-type polysilicon channel structures. The high surface-to-volume ratio of the NW channels enables efficient modulation of the channel conductance, which is interpreted as the synaptic weight. As a result, NW-type synaptic transistors exhibit a larger hysteresis window compared to film-type synaptic transistors, even within the same gate voltage sweeping range. Moreover, NW-type synaptic transistors demonstrate superior short-term facilitation and long-term memory transition compared with film-type ones, as evidenced by the measured paired-pulse facilitation and excitatory post-synaptic current characteristics at varying frequencies and pulse numbers. Additionally, we observed gradual potentiation/depression characteristics, making these artificial synapses applicable to artificial neural networks. Furthermore, the NW-type synaptic transistors exhibit improved Modified National Institute of Standards and Technology pattern recognition rate of 91.2%. In conclusion, NW structure channels are expected to be a promising technology for next-generation artificial intelligence (AI) semiconductors, and the integration of NW structure channels has significant potential to advance AI semiconductor technology. |
| first_indexed | 2024-03-10T23:00:43Z |
| format | Article |
| id | doaj.art-cf323ef6ba954ffa8b1aec9bfef2cdd9 |
| institution | Directory Open Access Journal |
| issn | 2313-7673 |
| language | English |
| last_indexed | 2024-03-10T23:00:43Z |
| publishDate | 2023-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Biomimetics |
| spelling | doaj.art-cf323ef6ba954ffa8b1aec9bfef2cdd92023-11-19T09:44:25ZengMDPI AGBiomimetics2313-76732023-09-018543210.3390/biomimetics8050432Enhanced Synaptic Behaviors in Chitosan Electrolyte-Based Electric-Double-Layer Transistors with Poly-Si Nanowire Channel StructuresDong-Hee Lee0Hwi-Su Kim1Ki-Woong Park2Hamin Park3Won-Ju Cho4Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electronic Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of KoreaIn this study, we enhance the synaptic behavior of artificial synaptic transistors by utilizing nanowire (NW)-type polysilicon channel structures. The high surface-to-volume ratio of the NW channels enables efficient modulation of the channel conductance, which is interpreted as the synaptic weight. As a result, NW-type synaptic transistors exhibit a larger hysteresis window compared to film-type synaptic transistors, even within the same gate voltage sweeping range. Moreover, NW-type synaptic transistors demonstrate superior short-term facilitation and long-term memory transition compared with film-type ones, as evidenced by the measured paired-pulse facilitation and excitatory post-synaptic current characteristics at varying frequencies and pulse numbers. Additionally, we observed gradual potentiation/depression characteristics, making these artificial synapses applicable to artificial neural networks. Furthermore, the NW-type synaptic transistors exhibit improved Modified National Institute of Standards and Technology pattern recognition rate of 91.2%. In conclusion, NW structure channels are expected to be a promising technology for next-generation artificial intelligence (AI) semiconductors, and the integration of NW structure channels has significant potential to advance AI semiconductor technology.https://www.mdpi.com/2313-7673/8/5/432nanowire channelchitosan electrolyteelectric double layerssynaptic transistorneuromorphic computing |
| spellingShingle | Dong-Hee Lee Hwi-Su Kim Ki-Woong Park Hamin Park Won-Ju Cho Enhanced Synaptic Behaviors in Chitosan Electrolyte-Based Electric-Double-Layer Transistors with Poly-Si Nanowire Channel Structures Biomimetics nanowire channel chitosan electrolyte electric double layers synaptic transistor neuromorphic computing |
| title | Enhanced Synaptic Behaviors in Chitosan Electrolyte-Based Electric-Double-Layer Transistors with Poly-Si Nanowire Channel Structures |
| title_full | Enhanced Synaptic Behaviors in Chitosan Electrolyte-Based Electric-Double-Layer Transistors with Poly-Si Nanowire Channel Structures |
| title_fullStr | Enhanced Synaptic Behaviors in Chitosan Electrolyte-Based Electric-Double-Layer Transistors with Poly-Si Nanowire Channel Structures |
| title_full_unstemmed | Enhanced Synaptic Behaviors in Chitosan Electrolyte-Based Electric-Double-Layer Transistors with Poly-Si Nanowire Channel Structures |
| title_short | Enhanced Synaptic Behaviors in Chitosan Electrolyte-Based Electric-Double-Layer Transistors with Poly-Si Nanowire Channel Structures |
| title_sort | enhanced synaptic behaviors in chitosan electrolyte based electric double layer transistors with poly si nanowire channel structures |
| topic | nanowire channel chitosan electrolyte electric double layers synaptic transistor neuromorphic computing |
| url | https://www.mdpi.com/2313-7673/8/5/432 |
| work_keys_str_mv | AT dongheelee enhancedsynapticbehaviorsinchitosanelectrolytebasedelectricdoublelayertransistorswithpolysinanowirechannelstructures AT hwisukim enhancedsynapticbehaviorsinchitosanelectrolytebasedelectricdoublelayertransistorswithpolysinanowirechannelstructures AT kiwoongpark enhancedsynapticbehaviorsinchitosanelectrolytebasedelectricdoublelayertransistorswithpolysinanowirechannelstructures AT haminpark enhancedsynapticbehaviorsinchitosanelectrolytebasedelectricdoublelayertransistorswithpolysinanowirechannelstructures AT wonjucho enhancedsynapticbehaviorsinchitosanelectrolytebasedelectricdoublelayertransistorswithpolysinanowirechannelstructures |