Amorphous/Nanocrystalline High-Entropy CoCrFeNiTi<sub>x</sub> Thin Films with Low Thermal Coefficient of Resistivity Obtained via Magnetron Deposition
High-entropy alloys are promising materials for novel thin-film resistors since they have high resistivity and a low-temperature coefficient of resistivity (TCR). In this work, a new high-entropy thin-film CoCrFeNiTi<sub>x</sub> was deposited on a Si/SiO<sub>2</sub> substrate...
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MDPI AG
2023-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/13/2004 |
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| author | Maksim Poliakov Dmitry Kovalev Sergei Vadchenko Dmitry Moskovskikh Philipp Kiryukhantsev-Korneev Lidiya Volkova Alexander Dudin Andrey Orlov Andrey Goryachev Alexander Rogachev |
| author_facet | Maksim Poliakov Dmitry Kovalev Sergei Vadchenko Dmitry Moskovskikh Philipp Kiryukhantsev-Korneev Lidiya Volkova Alexander Dudin Andrey Orlov Andrey Goryachev Alexander Rogachev |
| author_sort | Maksim Poliakov |
| collection | DOAJ |
| description | High-entropy alloys are promising materials for novel thin-film resistors since they have high resistivity and a low-temperature coefficient of resistivity (TCR). In this work, a new high-entropy thin-film CoCrFeNiTi<sub>x</sub> was deposited on a Si/SiO<sub>2</sub> substrate by means of magnetron sputtering of the multi-component target produced by hot pressing of the powder mixture. The samples possessed a thickness of 130–230 nm and an amorphous atomic structure with nanocrystallite traces. This structure persisted after being annealed up to 400 °C, which was confirmed using X-ray and electron diffraction. The film had a single-phase structure with a smooth surface and a uniform distribution of all elements. The obtained film served for microresistor elaboration, which was produced using the lithography technique and tested in a temperature range from −60 °C up to 200 °C. Resistivity at room temperature was estimated as 2.37 μOhm·m. The results have demonstrated that TCR depends on temperature according to the simple linear law in a range from −60 °C up to 130 °C, changing its value from −78 ppm/°C at low temperatures to −6.6 ppm/°C at 130 °C. Such characteristics show the possibility of using these high-entropy alloy films for resistive elements in contemporary and future micro-electronic devices. |
| first_indexed | 2024-03-11T01:33:39Z |
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| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T01:33:39Z |
| publishDate | 2023-07-01 |
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| series | Nanomaterials |
| spelling | doaj.art-cf64a592bf9948989a47add64b13ef192023-11-18T17:12:32ZengMDPI AGNanomaterials2079-49912023-07-011313200410.3390/nano13132004Amorphous/Nanocrystalline High-Entropy CoCrFeNiTi<sub>x</sub> Thin Films with Low Thermal Coefficient of Resistivity Obtained via Magnetron DepositionMaksim Poliakov0Dmitry Kovalev1Sergei Vadchenko2Dmitry Moskovskikh3Philipp Kiryukhantsev-Korneev4Lidiya Volkova5Alexander Dudin6Andrey Orlov7Andrey Goryachev8Alexander Rogachev9Merzhanov Institute of Structural Macrokinetics and Materials Science, Russian Academy of Sciences (ISMAN), Chernogolovka 142432, RussiaMerzhanov Institute of Structural Macrokinetics and Materials Science, Russian Academy of Sciences (ISMAN), Chernogolovka 142432, RussiaMerzhanov Institute of Structural Macrokinetics and Materials Science, Russian Academy of Sciences (ISMAN), Chernogolovka 142432, RussiaCenter of Functional Nano-Ceramics, National University of Science and Technology MISIS, Moscow 119049, RussiaCenter of Functional Nano-Ceramics, National University of Science and Technology MISIS, Moscow 119049, RussiaInstitute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow 119991, RussiaInstitute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow 119991, RussiaInstitute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow 119991, RussiaInstitute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow 119991, RussiaMerzhanov Institute of Structural Macrokinetics and Materials Science, Russian Academy of Sciences (ISMAN), Chernogolovka 142432, RussiaHigh-entropy alloys are promising materials for novel thin-film resistors since they have high resistivity and a low-temperature coefficient of resistivity (TCR). In this work, a new high-entropy thin-film CoCrFeNiTi<sub>x</sub> was deposited on a Si/SiO<sub>2</sub> substrate by means of magnetron sputtering of the multi-component target produced by hot pressing of the powder mixture. The samples possessed a thickness of 130–230 nm and an amorphous atomic structure with nanocrystallite traces. This structure persisted after being annealed up to 400 °C, which was confirmed using X-ray and electron diffraction. The film had a single-phase structure with a smooth surface and a uniform distribution of all elements. The obtained film served for microresistor elaboration, which was produced using the lithography technique and tested in a temperature range from −60 °C up to 200 °C. Resistivity at room temperature was estimated as 2.37 μOhm·m. The results have demonstrated that TCR depends on temperature according to the simple linear law in a range from −60 °C up to 130 °C, changing its value from −78 ppm/°C at low temperatures to −6.6 ppm/°C at 130 °C. Such characteristics show the possibility of using these high-entropy alloy films for resistive elements in contemporary and future micro-electronic devices.https://www.mdpi.com/2079-4991/13/13/2004high-entropy alloyamorphous structuremagnetron sputteringthin filmsresistorsmicroelectronic devices |
| spellingShingle | Maksim Poliakov Dmitry Kovalev Sergei Vadchenko Dmitry Moskovskikh Philipp Kiryukhantsev-Korneev Lidiya Volkova Alexander Dudin Andrey Orlov Andrey Goryachev Alexander Rogachev Amorphous/Nanocrystalline High-Entropy CoCrFeNiTi<sub>x</sub> Thin Films with Low Thermal Coefficient of Resistivity Obtained via Magnetron Deposition Nanomaterials high-entropy alloy amorphous structure magnetron sputtering thin films resistors microelectronic devices |
| title | Amorphous/Nanocrystalline High-Entropy CoCrFeNiTi<sub>x</sub> Thin Films with Low Thermal Coefficient of Resistivity Obtained via Magnetron Deposition |
| title_full | Amorphous/Nanocrystalline High-Entropy CoCrFeNiTi<sub>x</sub> Thin Films with Low Thermal Coefficient of Resistivity Obtained via Magnetron Deposition |
| title_fullStr | Amorphous/Nanocrystalline High-Entropy CoCrFeNiTi<sub>x</sub> Thin Films with Low Thermal Coefficient of Resistivity Obtained via Magnetron Deposition |
| title_full_unstemmed | Amorphous/Nanocrystalline High-Entropy CoCrFeNiTi<sub>x</sub> Thin Films with Low Thermal Coefficient of Resistivity Obtained via Magnetron Deposition |
| title_short | Amorphous/Nanocrystalline High-Entropy CoCrFeNiTi<sub>x</sub> Thin Films with Low Thermal Coefficient of Resistivity Obtained via Magnetron Deposition |
| title_sort | amorphous nanocrystalline high entropy cocrfeniti sub x sub thin films with low thermal coefficient of resistivity obtained via magnetron deposition |
| topic | high-entropy alloy amorphous structure magnetron sputtering thin films resistors microelectronic devices |
| url | https://www.mdpi.com/2079-4991/13/13/2004 |
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