Sequence Prediction for SiC MOSFET Active Gate Driving With a Recurrent Neural Network

This article develops a recurrent neural network (RNN) with an encoder–decoder structure to predict the driving sequence of SiC MOSFET active gate drivers (AGDs). With a set of switching targets as the input, the predictor generates an optimal active gate driving sequence to improve the s...

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Main Authors: Li Yang, Yuxuan Liu, Wensong Yu, Iqbal Husain
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Open Journal of Industry Applications
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10171405/
_version_ 1797780785020796928
author Li Yang
Yuxuan Liu
Wensong Yu
Iqbal Husain
author_facet Li Yang
Yuxuan Liu
Wensong Yu
Iqbal Husain
author_sort Li Yang
collection DOAJ
description This article develops a recurrent neural network (RNN) with an encoder–decoder structure to predict the driving sequence of SiC MOSFET active gate drivers (AGDs). With a set of switching targets as the input, the predictor generates an optimal active gate driving sequence to improve the switching transient. The development is based on a hybrid platform across MATLAB, PyTorch, and LTspice. A high-fidelity switching model is implemented in MATLAB to obtain reliable training data. The sequence predictor is trained with PyTorch. The predicted sequence is verified on an example Buck circuit in LTspice. In contrast to the state-of-the-art approach, the proposed method avoids exhaustive search in a large solution space; the sequence length is dynamically predicted per the driving strength at each step. The AGD sequences generated by the predictor effectively and precisely improve the switching transients, making the proposed sequence predictor an integral and valuable component for active gate driving.
first_indexed 2024-03-12T23:48:46Z
format Article
id doaj.art-cf9bfeaa1390429abe816230a22a0e27
institution Directory Open Access Journal
issn 2644-1241
language English
last_indexed 2024-03-12T23:48:46Z
publishDate 2023-01-01
publisher IEEE
record_format Article
series IEEE Open Journal of Industry Applications
spelling doaj.art-cf9bfeaa1390429abe816230a22a0e272023-07-13T23:00:53ZengIEEEIEEE Open Journal of Industry Applications2644-12412023-01-01422723710.1109/OJIA.2023.329163710171405Sequence Prediction for SiC MOSFET Active Gate Driving With a Recurrent Neural NetworkLi Yang0https://orcid.org/0000-0002-7116-3419Yuxuan Liu1Wensong Yu2https://orcid.org/0000-0002-2459-4697Iqbal Husain3https://orcid.org/0000-0003-0089-4326FREEDM System Center, North Carolina State University, Raleigh, NC, USADepartment of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC, USAFREEDM System Center, North Carolina State University, Raleigh, NC, USAFREEDM System Center, North Carolina State University, Raleigh, NC, USAThis article develops a recurrent neural network (RNN) with an encoder–decoder structure to predict the driving sequence of SiC MOSFET active gate drivers (AGDs). With a set of switching targets as the input, the predictor generates an optimal active gate driving sequence to improve the switching transient. The development is based on a hybrid platform across MATLAB, PyTorch, and LTspice. A high-fidelity switching model is implemented in MATLAB to obtain reliable training data. The sequence predictor is trained with PyTorch. The predicted sequence is verified on an example Buck circuit in LTspice. In contrast to the state-of-the-art approach, the proposed method avoids exhaustive search in a large solution space; the sequence length is dynamically predicted per the driving strength at each step. The AGD sequences generated by the predictor effectively and precisely improve the switching transients, making the proposed sequence predictor an integral and valuable component for active gate driving.https://ieeexplore.ieee.org/document/10171405/Active gate driver (AGD)deep learningrecurrent neural network (RNN)sequence predictionSiC MOSFET
spellingShingle Li Yang
Yuxuan Liu
Wensong Yu
Iqbal Husain
Sequence Prediction for SiC MOSFET Active Gate Driving With a Recurrent Neural Network
IEEE Open Journal of Industry Applications
Active gate driver (AGD)
deep learning
recurrent neural network (RNN)
sequence prediction
SiC MOSFET
title Sequence Prediction for SiC MOSFET Active Gate Driving With a Recurrent Neural Network
title_full Sequence Prediction for SiC MOSFET Active Gate Driving With a Recurrent Neural Network
title_fullStr Sequence Prediction for SiC MOSFET Active Gate Driving With a Recurrent Neural Network
title_full_unstemmed Sequence Prediction for SiC MOSFET Active Gate Driving With a Recurrent Neural Network
title_short Sequence Prediction for SiC MOSFET Active Gate Driving With a Recurrent Neural Network
title_sort sequence prediction for sic mosfet active gate driving with a recurrent neural network
topic Active gate driver (AGD)
deep learning
recurrent neural network (RNN)
sequence prediction
SiC MOSFET
url https://ieeexplore.ieee.org/document/10171405/
work_keys_str_mv AT liyang sequencepredictionforsicmosfetactivegatedrivingwitharecurrentneuralnetwork
AT yuxuanliu sequencepredictionforsicmosfetactivegatedrivingwitharecurrentneuralnetwork
AT wensongyu sequencepredictionforsicmosfetactivegatedrivingwitharecurrentneuralnetwork
AT iqbalhusain sequencepredictionforsicmosfetactivegatedrivingwitharecurrentneuralnetwork