Modelling and performance evaluation of diode‐assisted impedance source networks

Abstract This paper deals with a family of two‐ and three‐windings coupled inductor‐based impedance source networks. They have been basically derived from the successful quasi‐Y‐source network (q‐YSN) by replacing one of its capacitors with a diode with different combinations of coupled inductors an...

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Main Authors: Hamed Rezazadeh, Mohammad Monfared, Ali Nikbahar
Format: Article
Language:English
Published: Wiley 2021-11-01
Series:IET Power Electronics
Subjects:
Online Access:https://doi.org/10.1049/pel2.12201
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author Hamed Rezazadeh
Mohammad Monfared
Ali Nikbahar
author_facet Hamed Rezazadeh
Mohammad Monfared
Ali Nikbahar
author_sort Hamed Rezazadeh
collection DOAJ
description Abstract This paper deals with a family of two‐ and three‐windings coupled inductor‐based impedance source networks. They have been basically derived from the successful quasi‐Y‐source network (q‐YSN) by replacing one of its capacitors with a diode with different combinations of coupled inductors and called diode assisted impedance source networks (DA‐ISNs). The general three‐windings version, called diode‐assisted Y‐source network (DA‐YSN), as the origin of all other simplified versions, is thoroughly investigated from various points of view. From the voltage gain characteristics aspect, it offers a higher voltage gain with the same number of elements as the conventional q‐YSN. Lower magnetizing and input current ripples show the higher power density of DA‐YSN in comparison to q‐YSN. The effectively reduced voltage stress and the total value of capacitors, and a considerable decreased conversion loss of the magnetic element are the other attractive features of DA‐YSN. With the advantages of a low input current ripple and a high voltage gain, DA‐ISNs can be suitable choices for renewable energy and distributed power generation systems. Operating principle, circuit analysis, and parameters design guidelines for DA‐YSN are thoroughly investigated. Also, the small‐signal modelling, analysis and the controller design are presented in this paper. Finally, the theoretical properties of DA‐YSN are scrutinized by performing extensive experiments on a 200 W laboratory prototype.
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spelling doaj.art-cfa047eca0754a2db32993eb629a94e02022-12-22T04:33:22ZengWileyIET Power Electronics1755-45351755-45432021-11-0114152519253310.1049/pel2.12201Modelling and performance evaluation of diode‐assisted impedance source networksHamed Rezazadeh0Mohammad Monfared1Ali Nikbahar2Department of Electrical Engineering Faculty of Engineering Ferdowsi University of Mashhad Mashhad IranDepartment of Electrical Engineering Faculty of Engineering Ferdowsi University of Mashhad Mashhad IranDepartment of Electrical Engineering Faculty of Engineering Ferdowsi University of Mashhad Mashhad IranAbstract This paper deals with a family of two‐ and three‐windings coupled inductor‐based impedance source networks. They have been basically derived from the successful quasi‐Y‐source network (q‐YSN) by replacing one of its capacitors with a diode with different combinations of coupled inductors and called diode assisted impedance source networks (DA‐ISNs). The general three‐windings version, called diode‐assisted Y‐source network (DA‐YSN), as the origin of all other simplified versions, is thoroughly investigated from various points of view. From the voltage gain characteristics aspect, it offers a higher voltage gain with the same number of elements as the conventional q‐YSN. Lower magnetizing and input current ripples show the higher power density of DA‐YSN in comparison to q‐YSN. The effectively reduced voltage stress and the total value of capacitors, and a considerable decreased conversion loss of the magnetic element are the other attractive features of DA‐YSN. With the advantages of a low input current ripple and a high voltage gain, DA‐ISNs can be suitable choices for renewable energy and distributed power generation systems. Operating principle, circuit analysis, and parameters design guidelines for DA‐YSN are thoroughly investigated. Also, the small‐signal modelling, analysis and the controller design are presented in this paper. Finally, the theoretical properties of DA‐YSN are scrutinized by performing extensive experiments on a 200 W laboratory prototype.https://doi.org/10.1049/pel2.12201Power semiconductor devicesJunction and barrier diodesTransformers and reactorsPower convertors and power supplies to apparatus
spellingShingle Hamed Rezazadeh
Mohammad Monfared
Ali Nikbahar
Modelling and performance evaluation of diode‐assisted impedance source networks
IET Power Electronics
Power semiconductor devices
Junction and barrier diodes
Transformers and reactors
Power convertors and power supplies to apparatus
title Modelling and performance evaluation of diode‐assisted impedance source networks
title_full Modelling and performance evaluation of diode‐assisted impedance source networks
title_fullStr Modelling and performance evaluation of diode‐assisted impedance source networks
title_full_unstemmed Modelling and performance evaluation of diode‐assisted impedance source networks
title_short Modelling and performance evaluation of diode‐assisted impedance source networks
title_sort modelling and performance evaluation of diode assisted impedance source networks
topic Power semiconductor devices
Junction and barrier diodes
Transformers and reactors
Power convertors and power supplies to apparatus
url https://doi.org/10.1049/pel2.12201
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AT mohammadmonfared modellingandperformanceevaluationofdiodeassistedimpedancesourcenetworks
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