Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing
Abstract A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W(14 nm)/ZrO2(8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2023-05-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202207390 |
| _version_ | 1797819707831615488 |
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| author | Anna P. S. Crema Marian C. Istrate Alexandre Silva Veniero Lenzi Leonardo Domingues Megan O. Hill Valentin S. Teodorescu Corneliu Ghica Maria J. M. Gomes Mario Pereira Luís Marques Judith L. MacManus‐Driscoll José P. B. Silva |
| author_facet | Anna P. S. Crema Marian C. Istrate Alexandre Silva Veniero Lenzi Leonardo Domingues Megan O. Hill Valentin S. Teodorescu Corneliu Ghica Maria J. M. Gomes Mario Pereira Luís Marques Judith L. MacManus‐Driscoll José P. B. Silva |
| author_sort | Anna P. S. Crema |
| collection | DOAJ |
| description | Abstract A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W(14 nm)/ZrO2(8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL multiphysics simulations. The films annealed under the optimized conditions reveal the presence of the orthorhombic phase, as confirmed by X‐ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Macroscopic polarization‐electric field hysteresis loops show ferroelectric behavior, with saturation polarization of 12.8 µC cm−2, remnant polarization of 12.7 µC cm−2 and coercive field of 1.2 MV cm−1. The films exhibit a wake‐up effect that is attributed to the migration of point defects, such as oxygen vacancies, and/or a transition from nonferroelectric (monoclinic and tetragonal phase) to the ferroelectric orthorhombic phase. The capacitors demonstrate a stable polarization with an endurance of 6.0 × 105 cycles, demonstrating the potential of the NLA process for the fabrication of ferroelectric memory devices with high polarization, low coercive field, and high cycling stability. |
| first_indexed | 2024-03-13T09:27:35Z |
| format | Article |
| id | doaj.art-cfd144db6fac4c4f80dc03099563f9a3 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-03-13T09:27:35Z |
| publishDate | 2023-05-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-cfd144db6fac4c4f80dc03099563f9a32023-05-26T09:24:00ZengWileyAdvanced Science2198-38442023-05-011015n/an/a10.1002/advs.202207390Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser AnnealingAnna P. S. Crema0Marian C. Istrate1Alexandre Silva2Veniero Lenzi3Leonardo Domingues4Megan O. Hill5Valentin S. Teodorescu6Corneliu Ghica7Maria J. M. Gomes8Mario Pereira9Luís Marques10Judith L. MacManus‐Driscoll11José P. B. Silva12Physics Center of Minho and Porto Universities (CF‐UM‐UP) University of Minho Campus de Gualtar Braga 4710‐057 PortugalUniversity of Bucharest Faculty of Physics Atomistilor 405, Magurele Ilfov 077125 RomaniaPhysics Center of Minho and Porto Universities (CF‐UM‐UP) University of Minho Campus de Gualtar Braga 4710‐057 PortugalPhysics Center of Minho and Porto Universities (CF‐UM‐UP) University of Minho Campus de Gualtar Braga 4710‐057 PortugalPhysics Center of Minho and Porto Universities (CF‐UM‐UP) University of Minho Campus de Gualtar Braga 4710‐057 PortugalDept. of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Rd Cambridge CB3 OFS United KingdomUniversity of Bucharest Faculty of Physics Atomistilor 405, Magurele Ilfov 077125 RomaniaNational Institute of Materials Physics Lab. of Atomic Structures and Defects in Advanced Materials 405A Atomistilor Str. Magurele Ilfov 077125 RomaniaPhysics Center of Minho and Porto Universities (CF‐UM‐UP) University of Minho Campus de Gualtar Braga 4710‐057 PortugalPhysics Center of Minho and Porto Universities (CF‐UM‐UP) University of Minho Campus de Gualtar Braga 4710‐057 PortugalPhysics Center of Minho and Porto Universities (CF‐UM‐UP) University of Minho Campus de Gualtar Braga 4710‐057 PortugalDept. of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Rd Cambridge CB3 OFS United KingdomPhysics Center of Minho and Porto Universities (CF‐UM‐UP) University of Minho Campus de Gualtar Braga 4710‐057 PortugalAbstract A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W(14 nm)/ZrO2(8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL multiphysics simulations. The films annealed under the optimized conditions reveal the presence of the orthorhombic phase, as confirmed by X‐ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Macroscopic polarization‐electric field hysteresis loops show ferroelectric behavior, with saturation polarization of 12.8 µC cm−2, remnant polarization of 12.7 µC cm−2 and coercive field of 1.2 MV cm−1. The films exhibit a wake‐up effect that is attributed to the migration of point defects, such as oxygen vacancies, and/or a transition from nonferroelectric (monoclinic and tetragonal phase) to the ferroelectric orthorhombic phase. The capacitors demonstrate a stable polarization with an endurance of 6.0 × 105 cycles, demonstrating the potential of the NLA process for the fabrication of ferroelectric memory devices with high polarization, low coercive field, and high cycling stability.https://doi.org/10.1002/advs.202207390binary oxidesferroelectricitynanosecond laser annealingorthorhombic phase |
| spellingShingle | Anna P. S. Crema Marian C. Istrate Alexandre Silva Veniero Lenzi Leonardo Domingues Megan O. Hill Valentin S. Teodorescu Corneliu Ghica Maria J. M. Gomes Mario Pereira Luís Marques Judith L. MacManus‐Driscoll José P. B. Silva Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing Advanced Science binary oxides ferroelectricity nanosecond laser annealing orthorhombic phase |
| title | Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing |
| title_full | Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing |
| title_fullStr | Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing |
| title_full_unstemmed | Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing |
| title_short | Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing |
| title_sort | ferroelectric orthorhombic zro2 thin films achieved through nanosecond laser annealing |
| topic | binary oxides ferroelectricity nanosecond laser annealing orthorhombic phase |
| url | https://doi.org/10.1002/advs.202207390 |
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