Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing

Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing

Abstract A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W(14 nm)/ZrO2(8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL...

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Bibliographic Details
Main Authors: Anna P. S. Crema, Marian C. Istrate, Alexandre Silva, Veniero Lenzi, Leonardo Domingues, Megan O. Hill, Valentin S. Teodorescu, Corneliu Ghica, Maria J. M. Gomes, Mario Pereira, Luís Marques, Judith L. MacManus‐Driscoll, José P. B. Silva
Format: Article
Language:English
Published: Wiley 2023-05-01
Series:Advanced Science
Subjects:
binary oxides
ferroelectricity
nanosecond laser annealing
orthorhombic phase
Online Access:https://doi.org/10.1002/advs.202207390

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