Easy Fabrication of Performant SWCNT-Si Photodetector
We propose a simple method to fabricate a photodetector based on the carbon nanotube/silicon nitride/silicon (CNT/Si<sub>3</sub>N<sub>4</sub>/Si) heterojunction. The device is obtained by depositing a freestanding single-wall carbon nanotube (SWCNT) film on a silicon substrat...
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MDPI AG
2022-01-01
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Series: | Electronics |
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Online Access: | https://www.mdpi.com/2079-9292/11/2/271 |
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author | Daniele Capista Maurizio Passacantando Luca Lozzi Enver Faella Filippo Giubileo Antonio Di Bartolomeo |
author_facet | Daniele Capista Maurizio Passacantando Luca Lozzi Enver Faella Filippo Giubileo Antonio Di Bartolomeo |
author_sort | Daniele Capista |
collection | DOAJ |
description | We propose a simple method to fabricate a photodetector based on the carbon nanotube/silicon nitride/silicon (CNT/Si<sub>3</sub>N<sub>4</sub>/Si) heterojunction. The device is obtained by depositing a freestanding single-wall carbon nanotube (SWCNT) film on a silicon substrate using a dry transfer technique. The SWCNT/Si<sub>3</sub>N<sub>4</sub>/Si heterojunction is formed without the thermal stress of chemical vapor deposition used for the growth of CNTs in other approaches. The CNT film works as a transparent charge collecting electrode and guarantees a uniform photocurrent across the sensitive area of the device. The obtained photodetector shows a great photocurrent that increases linearly with the incident light intensity and grows with the increasing wavelength in the visible range. The external quantum efficiency is independent of the light intensity and increases with the wavelength, reaching 65% at 640 nm. |
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id | doaj.art-d00bb93bcd904c67b60bbd013f10f127 |
institution | Directory Open Access Journal |
issn | 2079-9292 |
language | English |
last_indexed | 2024-03-10T01:34:54Z |
publishDate | 2022-01-01 |
publisher | MDPI AG |
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spelling | doaj.art-d00bb93bcd904c67b60bbd013f10f1272023-11-23T13:35:03ZengMDPI AGElectronics2079-92922022-01-0111227110.3390/electronics11020271Easy Fabrication of Performant SWCNT-Si PhotodetectorDaniele Capista0Maurizio Passacantando1Luca Lozzi2Enver Faella3Filippo Giubileo4Antonio Di Bartolomeo5Department of Physical and Chemical Science, University of L’Aquila, Via Vetoio, 67100 Coppito, L’Aquila, ItalyDepartment of Physical and Chemical Science, University of L’Aquila, Via Vetoio, 67100 Coppito, L’Aquila, ItalyDepartment of Physical and Chemical Science, University of L’Aquila, Via Vetoio, 67100 Coppito, L’Aquila, ItalyDepartment of Physics, University of Salerno, Via Giovanni Paolo II 132, 84084 Fisciano, Salerno, ItalyCNR-SPIN Salerno, Via Giovanni Paolo II 132, 84084 Fisciano, Salerno, ItalyDepartment of Physics, University of Salerno, Via Giovanni Paolo II 132, 84084 Fisciano, Salerno, ItalyWe propose a simple method to fabricate a photodetector based on the carbon nanotube/silicon nitride/silicon (CNT/Si<sub>3</sub>N<sub>4</sub>/Si) heterojunction. The device is obtained by depositing a freestanding single-wall carbon nanotube (SWCNT) film on a silicon substrate using a dry transfer technique. The SWCNT/Si<sub>3</sub>N<sub>4</sub>/Si heterojunction is formed without the thermal stress of chemical vapor deposition used for the growth of CNTs in other approaches. The CNT film works as a transparent charge collecting electrode and guarantees a uniform photocurrent across the sensitive area of the device. The obtained photodetector shows a great photocurrent that increases linearly with the incident light intensity and grows with the increasing wavelength in the visible range. The external quantum efficiency is independent of the light intensity and increases with the wavelength, reaching 65% at 640 nm.https://www.mdpi.com/2079-9292/11/2/271carbon nanotubesheterostructurephotoconductivityquantum efficiencyphotodetectors |
spellingShingle | Daniele Capista Maurizio Passacantando Luca Lozzi Enver Faella Filippo Giubileo Antonio Di Bartolomeo Easy Fabrication of Performant SWCNT-Si Photodetector Electronics carbon nanotubes heterostructure photoconductivity quantum efficiency photodetectors |
title | Easy Fabrication of Performant SWCNT-Si Photodetector |
title_full | Easy Fabrication of Performant SWCNT-Si Photodetector |
title_fullStr | Easy Fabrication of Performant SWCNT-Si Photodetector |
title_full_unstemmed | Easy Fabrication of Performant SWCNT-Si Photodetector |
title_short | Easy Fabrication of Performant SWCNT-Si Photodetector |
title_sort | easy fabrication of performant swcnt si photodetector |
topic | carbon nanotubes heterostructure photoconductivity quantum efficiency photodetectors |
url | https://www.mdpi.com/2079-9292/11/2/271 |
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