Easy Fabrication of Performant SWCNT-Si Photodetector

We propose a simple method to fabricate a photodetector based on the carbon nanotube/silicon nitride/silicon (CNT/Si<sub>3</sub>N<sub>4</sub>/Si) heterojunction. The device is obtained by depositing a freestanding single-wall carbon nanotube (SWCNT) film on a silicon substrat...

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Main Authors: Daniele Capista, Maurizio Passacantando, Luca Lozzi, Enver Faella, Filippo Giubileo, Antonio Di Bartolomeo
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/11/2/271
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author Daniele Capista
Maurizio Passacantando
Luca Lozzi
Enver Faella
Filippo Giubileo
Antonio Di Bartolomeo
author_facet Daniele Capista
Maurizio Passacantando
Luca Lozzi
Enver Faella
Filippo Giubileo
Antonio Di Bartolomeo
author_sort Daniele Capista
collection DOAJ
description We propose a simple method to fabricate a photodetector based on the carbon nanotube/silicon nitride/silicon (CNT/Si<sub>3</sub>N<sub>4</sub>/Si) heterojunction. The device is obtained by depositing a freestanding single-wall carbon nanotube (SWCNT) film on a silicon substrate using a dry transfer technique. The SWCNT/Si<sub>3</sub>N<sub>4</sub>/Si heterojunction is formed without the thermal stress of chemical vapor deposition used for the growth of CNTs in other approaches. The CNT film works as a transparent charge collecting electrode and guarantees a uniform photocurrent across the sensitive area of the device. The obtained photodetector shows a great photocurrent that increases linearly with the incident light intensity and grows with the increasing wavelength in the visible range. The external quantum efficiency is independent of the light intensity and increases with the wavelength, reaching 65% at 640 nm.
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spelling doaj.art-d00bb93bcd904c67b60bbd013f10f1272023-11-23T13:35:03ZengMDPI AGElectronics2079-92922022-01-0111227110.3390/electronics11020271Easy Fabrication of Performant SWCNT-Si PhotodetectorDaniele Capista0Maurizio Passacantando1Luca Lozzi2Enver Faella3Filippo Giubileo4Antonio Di Bartolomeo5Department of Physical and Chemical Science, University of L’Aquila, Via Vetoio, 67100 Coppito, L’Aquila, ItalyDepartment of Physical and Chemical Science, University of L’Aquila, Via Vetoio, 67100 Coppito, L’Aquila, ItalyDepartment of Physical and Chemical Science, University of L’Aquila, Via Vetoio, 67100 Coppito, L’Aquila, ItalyDepartment of Physics, University of Salerno, Via Giovanni Paolo II 132, 84084 Fisciano, Salerno, ItalyCNR-SPIN Salerno, Via Giovanni Paolo II 132, 84084 Fisciano, Salerno, ItalyDepartment of Physics, University of Salerno, Via Giovanni Paolo II 132, 84084 Fisciano, Salerno, ItalyWe propose a simple method to fabricate a photodetector based on the carbon nanotube/silicon nitride/silicon (CNT/Si<sub>3</sub>N<sub>4</sub>/Si) heterojunction. The device is obtained by depositing a freestanding single-wall carbon nanotube (SWCNT) film on a silicon substrate using a dry transfer technique. The SWCNT/Si<sub>3</sub>N<sub>4</sub>/Si heterojunction is formed without the thermal stress of chemical vapor deposition used for the growth of CNTs in other approaches. The CNT film works as a transparent charge collecting electrode and guarantees a uniform photocurrent across the sensitive area of the device. The obtained photodetector shows a great photocurrent that increases linearly with the incident light intensity and grows with the increasing wavelength in the visible range. The external quantum efficiency is independent of the light intensity and increases with the wavelength, reaching 65% at 640 nm.https://www.mdpi.com/2079-9292/11/2/271carbon nanotubesheterostructurephotoconductivityquantum efficiencyphotodetectors
spellingShingle Daniele Capista
Maurizio Passacantando
Luca Lozzi
Enver Faella
Filippo Giubileo
Antonio Di Bartolomeo
Easy Fabrication of Performant SWCNT-Si Photodetector
Electronics
carbon nanotubes
heterostructure
photoconductivity
quantum efficiency
photodetectors
title Easy Fabrication of Performant SWCNT-Si Photodetector
title_full Easy Fabrication of Performant SWCNT-Si Photodetector
title_fullStr Easy Fabrication of Performant SWCNT-Si Photodetector
title_full_unstemmed Easy Fabrication of Performant SWCNT-Si Photodetector
title_short Easy Fabrication of Performant SWCNT-Si Photodetector
title_sort easy fabrication of performant swcnt si photodetector
topic carbon nanotubes
heterostructure
photoconductivity
quantum efficiency
photodetectors
url https://www.mdpi.com/2079-9292/11/2/271
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AT lucalozzi easyfabricationofperformantswcntsiphotodetector
AT enverfaella easyfabricationofperformantswcntsiphotodetector
AT filippogiubileo easyfabricationofperformantswcntsiphotodetector
AT antoniodibartolomeo easyfabricationofperformantswcntsiphotodetector