Synthesis of WS<sub>2</sub> by Chemical Vapor Deposition: Role of the Alumina Crucible
The role of the alumina crucible for the tungsten disulfide (WS<sub>2</sub>) growth on silicon dioxide substrates (SiO<sub>2</sub>/Si) under atmospheric pressure chemical vapor deposition (APCVD) was investigated. Both synthesis and properties of the APCVD-WS<sub>2</...
Main Authors: | , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-06-01
|
Series: | Crystals |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4352/12/6/835 |
_version_ | 1797488541502013440 |
---|---|
author | Neileth Stand Cesar D. Mendoza Fernando L. Freire |
author_facet | Neileth Stand Cesar D. Mendoza Fernando L. Freire |
author_sort | Neileth Stand |
collection | DOAJ |
description | The role of the alumina crucible for the tungsten disulfide (WS<sub>2</sub>) growth on silicon dioxide substrates (SiO<sub>2</sub>/Si) under atmospheric pressure chemical vapor deposition (APCVD) was investigated. Both synthesis and properties of the APCVD-WS<sub>2</sub> depend on the number of growth cycles when using the same alumina crucible. It was discovered that there is an ideal condition for the material’s synthesis, which is characterized by an increase in the photoluminescence (PL) yield and larger WS<sub>2</sub> triangles. It usually happens for the first three growth cycles. For the fourth cycle and beyond, the PL decreases gradually. Simultaneously, atomic force microscopy images revealed no important changes in the topography of the WS<sub>2</sub> flakes. As a function of the number of synthesis cycles, the progressive decrease in PL yield could be associated with materials with a higher density of defects, as identified by the LA(M)/A<sub>1g</sub>(M)−LA(M) ratio from Raman data using the green line. |
first_indexed | 2024-03-10T00:03:41Z |
format | Article |
id | doaj.art-d01cec86df5d4e97b6fafc3b554f0a23 |
institution | Directory Open Access Journal |
issn | 2073-4352 |
language | English |
last_indexed | 2024-03-10T00:03:41Z |
publishDate | 2022-06-01 |
publisher | MDPI AG |
record_format | Article |
series | Crystals |
spelling | doaj.art-d01cec86df5d4e97b6fafc3b554f0a232023-11-23T16:12:43ZengMDPI AGCrystals2073-43522022-06-0112683510.3390/cryst12060835Synthesis of WS<sub>2</sub> by Chemical Vapor Deposition: Role of the Alumina CrucibleNeileth Stand0Cesar D. Mendoza1Fernando L. Freire2Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro 22451-900, RJ, BrazilDepartamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro 22451-900, RJ, BrazilDepartamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro 22451-900, RJ, BrazilThe role of the alumina crucible for the tungsten disulfide (WS<sub>2</sub>) growth on silicon dioxide substrates (SiO<sub>2</sub>/Si) under atmospheric pressure chemical vapor deposition (APCVD) was investigated. Both synthesis and properties of the APCVD-WS<sub>2</sub> depend on the number of growth cycles when using the same alumina crucible. It was discovered that there is an ideal condition for the material’s synthesis, which is characterized by an increase in the photoluminescence (PL) yield and larger WS<sub>2</sub> triangles. It usually happens for the first three growth cycles. For the fourth cycle and beyond, the PL decreases gradually. Simultaneously, atomic force microscopy images revealed no important changes in the topography of the WS<sub>2</sub> flakes. As a function of the number of synthesis cycles, the progressive decrease in PL yield could be associated with materials with a higher density of defects, as identified by the LA(M)/A<sub>1g</sub>(M)−LA(M) ratio from Raman data using the green line.https://www.mdpi.com/2073-4352/12/6/835TMDsWS<sub>2</sub>XPSRamanAPCVDalumina crucibles |
spellingShingle | Neileth Stand Cesar D. Mendoza Fernando L. Freire Synthesis of WS<sub>2</sub> by Chemical Vapor Deposition: Role of the Alumina Crucible Crystals TMDs WS<sub>2</sub> XPS Raman APCVD alumina crucibles |
title | Synthesis of WS<sub>2</sub> by Chemical Vapor Deposition: Role of the Alumina Crucible |
title_full | Synthesis of WS<sub>2</sub> by Chemical Vapor Deposition: Role of the Alumina Crucible |
title_fullStr | Synthesis of WS<sub>2</sub> by Chemical Vapor Deposition: Role of the Alumina Crucible |
title_full_unstemmed | Synthesis of WS<sub>2</sub> by Chemical Vapor Deposition: Role of the Alumina Crucible |
title_short | Synthesis of WS<sub>2</sub> by Chemical Vapor Deposition: Role of the Alumina Crucible |
title_sort | synthesis of ws sub 2 sub by chemical vapor deposition role of the alumina crucible |
topic | TMDs WS<sub>2</sub> XPS Raman APCVD alumina crucibles |
url | https://www.mdpi.com/2073-4352/12/6/835 |
work_keys_str_mv | AT neilethstand synthesisofwssub2subbychemicalvapordepositionroleofthealuminacrucible AT cesardmendoza synthesisofwssub2subbychemicalvapordepositionroleofthealuminacrucible AT fernandolfreire synthesisofwssub2subbychemicalvapordepositionroleofthealuminacrucible |