| Summary: | The advancement of power modules demands more reliable insulating circuit substrates. Traditional substrates, comprising Cu and Si3N4, are produced using active metal brazing (AMB). However, AMB substrates have reliability concerns owing to electrochemical migration and void formation from brazing filler metals. This study introduces a quasi-direct Cu–Si3N4 bonding technique using a Ti/Al bilayer active metal deposition at the bonding interface. A sputtered Ti/Al bilayer was formed on the Si3N4 surface, then heated and pressurized the sputtered Si3N4 substrate with Cu sheets in vacuum to bond each other without voids or delamination. The Ti/Al layers reacted with Si3N4 and Cu, forming a 300 nm intermediate layer. TEM observations show this layer contains segregated Ti–N and Cu–Al phases, with a good lattice match to Si3N4 and Cu–Al. Temperature-cycling tests on the Cu/Si3N4/Cu substrate revealed delamination caused by increased tensile stress at the periphery of the bonding area due to asymmetrical Cu patterns. This novel quasi-direct Cu–Si3N4 bonding technique addresses issues of electrochemical migration and void formation seen in AMB substrates, offering a reliable bonding interface for power electronic substrates.
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