Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate
The advancement of power modules demands more reliable insulating circuit substrates. Traditional substrates, comprising Cu and Si3N4, are produced using active metal brazing (AMB). However, AMB substrates have reliability concerns owing to electrochemical migration and void formation from brazing f...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-02-01
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| Series: | Materials & Design |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127524000091 |
| _version_ | 1797301618321915904 |
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| author | Hiroaki Tatsumi Seongjae Moon Makoto Takahashi Takahiro Kozawa Eiki Tsushima Hiroshi Nishikawa |
| author_facet | Hiroaki Tatsumi Seongjae Moon Makoto Takahashi Takahiro Kozawa Eiki Tsushima Hiroshi Nishikawa |
| author_sort | Hiroaki Tatsumi |
| collection | DOAJ |
| description | The advancement of power modules demands more reliable insulating circuit substrates. Traditional substrates, comprising Cu and Si3N4, are produced using active metal brazing (AMB). However, AMB substrates have reliability concerns owing to electrochemical migration and void formation from brazing filler metals. This study introduces a quasi-direct Cu–Si3N4 bonding technique using a Ti/Al bilayer active metal deposition at the bonding interface. A sputtered Ti/Al bilayer was formed on the Si3N4 surface, then heated and pressurized the sputtered Si3N4 substrate with Cu sheets in vacuum to bond each other without voids or delamination. The Ti/Al layers reacted with Si3N4 and Cu, forming a 300 nm intermediate layer. TEM observations show this layer contains segregated Ti–N and Cu–Al phases, with a good lattice match to Si3N4 and Cu–Al. Temperature-cycling tests on the Cu/Si3N4/Cu substrate revealed delamination caused by increased tensile stress at the periphery of the bonding area due to asymmetrical Cu patterns. This novel quasi-direct Cu–Si3N4 bonding technique addresses issues of electrochemical migration and void formation seen in AMB substrates, offering a reliable bonding interface for power electronic substrates. |
| first_indexed | 2024-03-07T23:25:09Z |
| format | Article |
| id | doaj.art-d029dab47bb749a3a8e5ea4cf40c44bd |
| institution | Directory Open Access Journal |
| issn | 0264-1275 |
| language | English |
| last_indexed | 2024-03-07T23:25:09Z |
| publishDate | 2024-02-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials & Design |
| spelling | doaj.art-d029dab47bb749a3a8e5ea4cf40c44bd2024-02-21T05:23:52ZengElsevierMaterials & Design0264-12752024-02-01238112637Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrateHiroaki Tatsumi0Seongjae Moon1Makoto Takahashi2Takahiro Kozawa3Eiki Tsushima4Hiroshi Nishikawa5Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan; Corresponding author.FJ Composite Materials Co., LTD., 2-2-3 Kashiwadai Minami, Chitose, Hokkaido 066-0009, JapanJoining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047, JapanJoining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047, JapanFJ Composite Materials Co., LTD., 2-2-3 Kashiwadai Minami, Chitose, Hokkaido 066-0009, JapanJoining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047, JapanThe advancement of power modules demands more reliable insulating circuit substrates. Traditional substrates, comprising Cu and Si3N4, are produced using active metal brazing (AMB). However, AMB substrates have reliability concerns owing to electrochemical migration and void formation from brazing filler metals. This study introduces a quasi-direct Cu–Si3N4 bonding technique using a Ti/Al bilayer active metal deposition at the bonding interface. A sputtered Ti/Al bilayer was formed on the Si3N4 surface, then heated and pressurized the sputtered Si3N4 substrate with Cu sheets in vacuum to bond each other without voids or delamination. The Ti/Al layers reacted with Si3N4 and Cu, forming a 300 nm intermediate layer. TEM observations show this layer contains segregated Ti–N and Cu–Al phases, with a good lattice match to Si3N4 and Cu–Al. Temperature-cycling tests on the Cu/Si3N4/Cu substrate revealed delamination caused by increased tensile stress at the periphery of the bonding area due to asymmetrical Cu patterns. This novel quasi-direct Cu–Si3N4 bonding technique addresses issues of electrochemical migration and void formation seen in AMB substrates, offering a reliable bonding interface for power electronic substrates.http://www.sciencedirect.com/science/article/pii/S0264127524000091Silicon nitrideCeramic insulating circuit substrateCu–Si3N4 bondingBonding interface |
| spellingShingle | Hiroaki Tatsumi Seongjae Moon Makoto Takahashi Takahiro Kozawa Eiki Tsushima Hiroshi Nishikawa Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate Materials & Design Silicon nitride Ceramic insulating circuit substrate Cu–Si3N4 bonding Bonding interface |
| title | Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate |
| title_full | Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate |
| title_fullStr | Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate |
| title_full_unstemmed | Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate |
| title_short | Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate |
| title_sort | quasi direct cu si3n4 bonding using multi layered active metal deposition for power module substrate |
| topic | Silicon nitride Ceramic insulating circuit substrate Cu–Si3N4 bonding Bonding interface |
| url | http://www.sciencedirect.com/science/article/pii/S0264127524000091 |
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